Andreev V.M.1, Kalinovskii V.S.1, Klimko G.V.1, Kontrosh E.V.1, Malevskaya A.V.1, Pokrovskiy P.V.1, Shvarts M.Z.1
1Ioffe Institute, St. Petersburg, Russia
Email: vmandreev@mail.ioffe.ru
The paper presents the results of developing and researching highly efficient microwave laser-radiation photodetectors based on the MBE p-i-n-AlGaAs/GaAs heterostructure with a Bragg reflector. The developed universal photodetectors with the photosensitive surface diameter of 70 μm ensured obtaining the minimum FWHM photoresponse pulse duration of 135 ps in the pulsed mode at the reverse bias of 25 V. In the photovoltaic mode (without reverse bias), the efficiency factor of 60% was obtained at the laser radiation power Plas=37 mW at wavelength of 850 nm. Keywords: high-speed photodetector, molecular beam epitaxy, AlGaAs/GaAs heterostructure, Bragg reflector, pulsed laser radiation.
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