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Synthesis of Au/Si nanostructures by STM lithography

DOI: 10.21883/TPL.2022.06.53790.19224

Lebedev D. V.^1,2,3, Shkoldin V. A.^1,4, Mozharov A. M.², Petukhov A. E.², Golubok A. O.³, Arkhipov A. V.⁵, Mukhin I. S.^1,5, Dubrovsky V. G.²

¹Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
²St. Petersburg State University, St. Petersburg, Russia
³Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
⁴ITMO University, St. Petersburg, Russia
⁵Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia

Email: Denis.v.lebedev@gmail.com

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Abstract
References
Статистика просмотров

A technique for synthesizing nanostructures by current lithography in a scanning tunneling microscope (STM lithography) in layered Au/Si structures has been developed. An experimental dependence of the geometric dimensions of the created nanostructures on the time of current STM lithography has been obtained. A theoretical model for the growth of nanostructures is proposed, which explains the nonlinear dependence of the radius of the obtained nanostructures on time with saturation in the region of large radii. Keywords: Au/Si nanostructures, STM lithography, growth rate, modeling.

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