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Effect of dopant on piezoelectric and dielectric properties of thin films Bi3.25La0.75Ti3-xAxO12 (A --- Mn, Zr, Nb)
Russian version
DOI: 10.21883/PSS.2022.10.54236.376
Kiselev D. A.1,2, Starukhina S. S.2, Ilina T. S.2, Kuharskaya N. F.1, Naryshkina V. G.1, Sivov A. A.1, Chucheva G. V.1
1Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
2National University of Science and Technology MISiS, Moscow, Russia
Email: dm.kiselev@misis.ru, gvc@ms.ire.rssi.ru
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It is shown that microstructure, dielectric and piezoelectric properties change in films based on lanthanum-substituted bismuth titanate (BLT) depending on the alloying impurity material, which leads to changes in coercive voltage, internal displacement field and control coefficient. Keywords: lead-free ferroelectric films, bismuth titanate, electrophysical properties, capacitance-voltage characteristics, piezoresponse force microscopy.
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