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Metal-Insulator phase transition in thin films of vanadium dioxide doped with indium
Russian version
DOI: 10.21883/PSS.2022.07.54592.322
Andreev V. N.1, Klimov V. A.1
1Ioffe Institute, St. Petersburg, Russia
Email: vn.andreev.solid@mail.ioffe.ru
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The electrical conductivity of thin polycrystalline films V(1-x)InxO2 has been studied in a wide temperature range covering the regions of existence of both the metallic and insulator phases. It is shown that with increasing indium concentration, the temperature of the metal-insulator phase transition decreases, and the width of the temperature region of phase coexistence monotonically increases. To explain the temperature dependence of the electrical conductivity of the insulator phase V(1-x)InxO2, a model of hopping conductivity is applied, taking into account the effect of thermal vibrations of atoms on the resonance integral. Calculated the values of the parameter ε depend on the degree of doping of VO2. Keywords: phase transition, vanadium oxides, thin films, polaron, electrical conductivity.
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