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The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode
Rozhkov A.V.
1, Ivanov M.S.
1, Rodin P.B.
1
1Ioffe Institute, St. Petersburg, Russia
Email: rozh@hv.ioffe.rssi.ru
It is experimentally established that high-voltage GaAs diodes maintain conducting state with low residual voltage after switching to the conducting state in the delayed impact-ionization mode. The duration of the constant current in the reversely-biased structure is determined by the duration of the applied rectangular voltage pulse (up to 100 ns) and significantly exceeds drift extraction and recombination times. The discovered effect of self-supporting conducting state resembles the "lock-on" effect in optically activated GaAs semiconductor switches and S-diodes with deep centers. The effect can be explained by shock ionization in narrow collapsing Gann domains. Keywords: high-voltage GaAs diodes, "lock-on" effect.
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