Technical Physics Letters
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Features of the current-voltage characteristic of the Ti-Si@O@Al junction Ti-Si@O@Al
Rudy A. S.
1, Churilov A. B.
1, Mironrenko A. A.
1, Naumov V. V.
1, Kurbatov S. V.
1, Kozlov E. A.
1
1Demidov State University, Yaroslavl, Russia
Email: rudy@uniyar.ac.ru, abchurilov@mail.ru, amironenko55@mail.ru, vnau@rambler.ru, kurbatov-93@bk.ru, eakf@yandex.ru
The results on measuring the I-V characteristics of the metal-semiconductor transition within the Ti (200 nm)|Si@O@Al (180 nm)|Ti (203 nm) test structure are presented. The basis of the Si@O@Al nanocomposite is a solid solution of Al in amorphous silicon a-Si(Al). The I-V of the test structure has a form characteristic of a reverse-biased ohmic contact between a metal and a p-type semiconductor, which implies that a-Si(Al) is a substitutional solid solution. It is shown that the I-V fits well the framework of the metal-semiconductor transition model and the varistor effect of the nanocomposite. Within the framework of the percolation model, it is shown that the I-V give values of the Si@O@Al resistivity, which are overestimated with respect to the resistance of the a-Si(Al) solid solution. Keywords: nanocomposite, amorphous silicon, solid solution, Schottky barrier, nonlinear conductor, dangling bonds.
- A.A. Mironenko, I.S. Fedorov, A.S. Rudy, V.N. Andreev, D.Yu. Gryzlov, T.L. Kulova, A.M. Skundin, Monatsh. Chem. --- Chem. Monthly, 150 (10), 1753 (2019). DOI: 10.1007/s00706-019-02497-1
- T.L. Kulova, A.A. Mironenko, A.S. Rudy, A.M. Skundin, All solid state thin-film lithium-ion batteries. Materials, technology, and diagnostics (CRC Press, Boca Raton, 2021). DOI: 10.1201/9780429023736
- A.S. Rudyi, A.A. Mironenko, V.V. Naumov, A.B. Churilov, Pis'ma Zh. Tekh. Fiz., 48 (12), 32 (2022) (in Russian). DOI: 10.21883/PJTF.2022.12.52676.19188
- M. Shur, Physics of semiconductor devices (Prentice-Hall, N.J., 1990), p. 197
- M.K. Kerimov, M.A. Kurbanov, I.S. Sultanahmedova, I.A. Faradzhzade, F.N. Tatardar, H.S. Aliyev, F.F. Yahyaev, U.V. Yusifova, Semiconductors, 44 (7), 904 (2010). DOI: 10.1134/S1063782610070134
- D.A. Drabold, U. Stephan, J. Dong, S.M. Nakhmanson, J. Mol. Graphics Mod., 17 (5-6), 285 (1999). DOI: 10.1016/S1093-3263(99)00036-4
- B.A. Golodenko, A.B. Golodenko, Vestn. Voronezh. Gos. Univ. Inzh. Tekhnol., No. 2, 65 (2014) (in Russian). https://cyberleninka.ru/article/n/modelirovanie-elektronnoy-struktury-i-raschyot-osnovnyh-elektro-fizicheskih-parametrov-amorfnogo-kremniya
- V.B. Kvaskov, Poluprovodnikovye pribory s bipolyarnoi provodimost'yu (Energoatomizdat, M., 1988) (in Russian)
- T.L. Kulova, L.A. Mazaletskii, A.A. Mironenko, A.S. Rudyi, A.M. Skundin, Yu.S. Tortseva, I.S. Fedorov, Russ. Microelectronics, 50 (1), 45 (2021). DOI: 10.1134/S1063739720060074
- P. Thomas, J.C. Flachet, J. Phys. Colloq., 42 (C4), C4-151 (1981). DOI: 10.1051/jphyscol:1981430
- H. Steinfink, B. Post, I. Fankuchen, Acta Cryst., 8 (7), 420 (1955). DOI: 10.1107/s0365110x55001333
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.