Technical Physics Letters
To authors
Volumes and Issues
- 2024
- 2023
- 2022
Study of the mechanical strength of thin silicon wafers in the dependance on their surface treatment during thinning
The mechanical strength of silicon wafers of 100 μm thickness was studied. Loading of the wafers was carried out by the "ring-on ring" method, stress and deflection under the small ring were determined by finite element modeling. The validity of the calculation model was checked by comparing the dependences of the deflection under the small ring on the load obtained in the experiment and by the simulation. The effect of methods of wafers obtaining and their surface treatment on the strength, as well as the connection between the strength and surface roughness characteristics were shown. Keywords: silicon, strength, chemical polishing treatment, surface roughness.
- F. Kaule, B. Kohler, J. Hirsch, S. Schoenfelder, D. Lausch, Solar Energy Mater. Solar Cells, 185, 511 (2018). DOI: 10.1016/j.solmat.2018.05.057
- H. Sekhar, T. Fukuda, K. Tanahashi, H. Takato, H. Ono, Y. Sampei, T. Kobayashi, Mater. Sci. Semicond. Process., 119, 105209 (2020). DOI: 10.1016/j.mssp.2020.105209
- J.-H. Woo, Y.-Ch. Kim, S.-H. Kim, J. Jang, H.N. Han, K.J. Choi, I. Kim, J.-Y. Kim, Scripta Mater., 140, 1 (2017). DOI: 10.1016/j.scriptamat.2017.06.047
- S. Gouttebroze, H.I. Lange, X. Ma, R. Glockner, B. Emamifard, M. Syvertsen, M. Vardavoulias, A. Ulyashin, Phys. Status Solidi A, 210, 777 (2013). DOI: 10.1002/pssa.201300003
- V.A. Popovich, W. Geerstma, M. Janssen, I.J. Bennett, I.M. Richardson, in EPD Congress 2015, ed. by J. Yurko, A. Allanore, L. Bartlett, J. Lee, L. Zhang, G. Tranell, Yu. Meteleva-Fischer, S. Ikhmayies, A.S. Budiman, P. Tripathy, G. Fredrickson (The Minerals, Metals \& Materials Society, 2015), p. 241. DOI: 10.1002/9781119093503.ch28
- V.V. Shpeizman, V.I. Nikolaev, A.O. Pozdnyakov, A.V. Bobyl', R.B. Timashov, A.I. Averkin, S.E. Nikitin, O.I. Kon'kov, G.G. Shelopin, E.I. Terukov, A.V. Nashchekin, Tech. Phys., 65, 1123 (2020). DOI: 10.1134/S1063784220070191
- G. Rozgonyi, K. Youssef, P. Kulshreshtha, M. Shi, E. Good, Solid State Phenom., 178-179, 79 (2011). DOI: 10.4028/www.scientific.net/SSP.178-179.79
- A.M. Gabor, R. Janoch, A. Anselmo, J.L. Lincoln, H. Seigneur, Ch. Honeker, in 2016 IEEE 43rd Photovoltaic Specialists Conf. (PVSC) (IEEE, 2016), p. 3574
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.