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Formation of periodic two-phase structures on the surface of amorphous Ge2Sb2Te5 films under the action of ultrashort laser pulses of different durations and repetition rates
Russian version
DOI: 10.61011/EOS.2023.02.55783.15-23
Smayev M. P. 1, Lazarenko P. I.2, Fedyanina M. E.2, Budagovsky I. A.1, Raab A.2, Sagunova I. V.2, Kozyukhin S. A.3,4
1Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia
2National Research University of Electronic Technology, Zelenograd, Moscow, Russia
3Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia
4Tomsk State University, Tomsk, Russia
Email: smayev@lebedev.ru
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Phase change materials due to their high susceptibility to low-intensity light fields are extremely attractive for active microphotonics and integrated optics devices. As a result of fast phase switching, these materials change the refractive index in a wide spectral range, which has found application in information storage systems. In this work, we studied the formation of two-phase periodic structures consisting of alternating lines of amorphous and crystalline phases on the surface of thin-film Ge2Sb2Te5 phase change materials exposed to ultrashort laser pulses. Periodic structures were formed at a wavelength of 1030 nm at different durations and repetition rates of light pulses. It has been established that the development of two-phase structures obtained at a constant energy fluence remains practically unchanged with an increase in the repetition rate from 10 kHz to 1 MHz, but a change in the pulse duration from 180 fs to 10 ps leads to a violation of the periodic structure due to the formation of extended continuously crystallized regions. Keywords: chalcogenide films, Ge2Sb2Te5, phase change materials, laser-induced periodic surface structures, two-phase structures. DOI: 10.61011/EOS.2023.02.55783.15-23
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