Technical Physics
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Off-axis aspherical collector for EUV-lithography and SXR microscopy
Malyshev I.V.1, Mikhailenko M.S.1, Pestov A.E.
1, Toropov M.N.1, Chernyshev A.K.1, Chkhalo N.I.1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: ilya-malyshev@ipmras.ru, mikhaylenko@ipmras.ru, aepestov@ipm.sci-nnov.ru, toropov@ipmras.ru, chernyshev@ipmras.ru, chkhalo@ipm.sci-nnov.ru
By the method of ion-beam shape correction, a small-sized ion beam formed a non axisymmetric aspherical profile of the collector surface for an extreme ultraviolet radiation source TEUS-S100 with a numerical aperture of NA=0.25, PV on the surface is - 36.3 μm microns, the surface shape accuracy by standard deviation is - 0.074 μm microns, which allowed to obtain a focusing spot with a width of 300 μm at half-height. To solve the problem, the technological ion source KLAN-53M was upgraded the flat ion-optical system was replaced with a focusing one. The ion-optical system consisting of a pair of concave grids with a radius of curvature of 60 mm provided the following parameters of the ion beam: the ion current is 20 mA, the width at half height is 8.2 mm at a distance of 66 mm from the cutoff of the ion source. Keywords: EUV radiation, ion beam correction, ion source, aspherics. DOI: 10.61011/TP.2023.07.56635.99-23
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