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Effect of an External Alternating Electric Field on the Efficiency of a Superconducting Single-Photon Detector

DOI: 10.61011/TP.2023.07.56637.88-23

Sedykh K. O.^1,2, Suleimen Y.³, Svyatodukh M. I.^1,2, Podlesnyy A.³, Kovalyuk V. V.^1,4, An P. P.^2,4, Kaurova N. S.², Florya I. N.^2,4, Lakhmanskiy K. E.³, Goltsman G. N.^1,3

¹National Research University Higher School of Economics, Moscow, Russia
²Moscow Pedagogical State University, Moscow, Russia
³Russian Quantum Center, Moscow, Russia
⁴National University of Science and Technology MISiS, Moscow, Russia

Email: kseniaolegovna98@gmail.com

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Abstract
References
Статистика просмотров

In this paper, model of a surface ion trap for a scalable quantum computer with an RF electrode and a superconducting single-photon detector was studied with an operating temperature of 4 K. The amplitude range of the radio frequency signal varied from 10 to 800 mV at frequencies from 5 to 20 MHz. The effect of the induced external RF field of the trap on the dark and bright count rate of a single-photon detector is studied. The results of this work are important in the design of surface ion traps with planar single-photon detectors. Keywords: surface ion trap, superconducting single-photon detector, niobium nitride, scalable ion quantum computer. DOI: 10.61011/TP.2023.07.56637.88-23

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