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Investigation of radiation resistance of heterostructure silicon solar cells

DOI: 10.61011/TPL.2023.08.56689.19573

Kalinovskii V. S. ¹, Terukov E. I. ^1,2, Prudchenko K. K. ¹, Bazeley A. A. ², Kontrosh E. V. ¹, Tolkachev I. A. ¹, Titov A. A. ²

¹Ioffe Institute, St. Petersburg, Russia
²R&D Center of Thin Film Technologies in Energetics under the Ioffe Institute LLC, St. Petersburg, Russia

Email: prudchenkokk@mail.ioffe.ru

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Abstract
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The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5· 10¹⁴-1· 10¹⁵ cm^-2 has been studied. Studies have shown that the smallest degradation of the "saturation" currents of the diffusion current flow mechanism from J_0d≤ 5· 10^-13 A/cm² to J_0d≤ 3· 10^-12 A/cm² and efficiency from 19.2 to 13.6% (AM0, 1367 W/m²) were n-α-Si:H/c-p(Ga)/p- α-Si:H and n-μ c-Si:H/c-p(Ga)/p -α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft. Keywords: heterostructure silicon solar cells, saturation currents, efficiency, radiation resistance, 1 MeV electrons, low orbit satellite communication. DOI: 10.61011/TPL.2023.08.56689.19573

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