X-Ray Luminescence of ZnO Films More Than 100 μm thick
Venevtsev I. D.1, Muslimov A. E.2
1Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
2Federal Research Center "Crystallography and Photonics", Russian Academy of Sciences, Moscow, Russia
Email: venevtsev.ivan@gmail.com, amuslimov@mail.ru

PDF
For the first time, the work presents a thin-film X-ray scintillator based on ZnO with a thickness of more than 100 μm with luminescence decay kinetics of the order of 1.1 ns (including the width of the excitation pulse). The absorption edge of the film scintillator is shown to be located in the region of 388 nm. The total transmittance of the sample in the visible and near infrared region reaches 40%. The X-ray excited luminescence spectrum is represented by two intense bands: a narrow band of excitonic nature with a maximum in the region of 389 nm and a wide band of green luminescence related to intrinsic defects. Keywords: ZnO, thick films, X-ray luminescence. DOI: 10.61011/TPL.2023.09.56704.19641
  1. M.R. Wagner, G. Callsen, G.S. Reparaz, J.-H. Schulze, R. Kirste, M. Cobet, I.A. Ostapenko, S. Rodt, C. Nenstiel, M. Kaiser, A. Hoffmann, A.V. Rodina, M.R. Phillips, S. Lautenschlager, S. Eisermann, B.K. Meyer, Phys. Rev. B, 84 (3), 035313 (2011). DOI: 10.1103/PhysRevB.84.035313
  2. N.N. Asemi, M.J. Aljaafreh, S. Prasad, S. Aldawood, M.S. AlSalhi, J. King Saud Univ. --- Sci., 34 (4), 101967 (2022). DOI: 10.1016/j.jksus.2022.101967
  3. A. Spustaka, D. Millers, E. Einbergs, V. Vitola, E. Vanags, Opt. Mater., 126, 112181 (2022). DOI: 10.1016/j.optmat.2022.112181
  4. S. He, Y. Li, L. Chen, T. Jin, L. Liu, J. Ruan, X. Ouyang, Materials, 15 (4), 1487 (2022). DOI: 10.3390/ma15041487
  5. L. Fan, C. Zhong, X. Wang, J. Wuhan Univ. Technol. --- Mater. Sci. Ed., 37 (4), 576 (2022). DOI: 10.1007/s11595-022-2569-0
  6. M.A. Borysiewicz, Crystals, 9 (10), 505 (2019). DOI: 10.3390/cryst9100505
  7. A.M. Ismailov, V.A. Nikitenko, M.R. Rabadanov, L.L. Emiraslanova, I.S. Aliev, M.K. Rabadanov, Vacuum, 168, 108854 (2019). DOI: 10.1016/j.vacuum.2019.108854
  8. P.A. Rodnyi, S.B. Mikhrin, A.N. Mishin, A.V. Sidorenko. IEEE Trans. Nucl. Sci., 48 (6), 2340 (2001). https://doi.org/10.1109/23.983264
  9. G.I. Distler, V.P. Vlasov, Yu.M.Gerasimov, S.A. Kobzareva, E.I. Kortukova, V.N. Lebedeva, V.V. Moskvin, L.A. Shenyavskaya, Dekorirovanie poverkhnosti tverdykh tel (Nauka, M., 1976) (in Russian)
  10. D.W. Pashley, Recent Prog. Surf. Sci., 3, 23 (1970). DOI: 10.1016/B978-0-12-571803-5.50008-0
  11. I.V. Kozhevnikov, A.V. Buzmakov, F. Siewert, K. Tiedtke, M. Stormer, L. Samoylova, H. Sinn, J. Synch. Rad., 23 (1), 78 (2016). DOI: 10.1107/S160057751502202X
  12. A.P. Tarasov, A.E. Muslimov, V.M. Kanevsky, Materials, 15 (24), 8723 (2022). DOI: 10.3390/ma15248723
  13. J. Ji, A.M. Colosimo, W. Anwand, L.A. Boatner, A. Wagner, P.S. Stepanov, T.T. Trinh, M.O. Liedke, R. Krause-Rehberg, T.E. Cowan, F.A. Selim, Sci. Rep., 6 (1), 31238 (2016). DOI: 10.1038/srep31238
  14. I.D. Venevtsev, A.E. Muslimov, A.P. Tarasov, L.L. Emiraslanova, A.M. Ismailov, V.M. Kanevsky, Opt. Spectrosc., 130 (11), 1458 (2022). DOI: 10.21883/EOS.2022.11.55106.3845-22
  15. E.I. Gorokhova, P.A. Rodnyi, E.P. Lokshin, K.P. Lott, G.B. Kunshina, K.A. Chernenko, G.V. Ananieva, S.B. Eron'ko, I.V. Khodyuk, O.G. Gromov, E.A. Oreschenko, J. Opt. Technol., 78 (11), 753 (2011). DOI: 10.1364/JOT.78.000753
  16. P.A. Rodnyi, K.A. Chernenko, I.D. Venevtsev, Opt. Spectrosc., 125 (3), 372 (2018). DOI: 10.1134/S0030400X18090205
  17. B.K. Meyer, H. Alves, D.M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Strab urg, M. Dworzak, U. Haboeck, A.V. Rodina, Phys. Status Solidi B, 241 (2), 231 (2004). DOI: 10.1002/pssb.200301962

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru