Current instability in heterostructures based on thin layers of colloidal Ag2Se quantum dots and fullerene C60
Gurchenko V. S.1, Mazinov A. S.1, Tyutyunik A. S.1, Grevtseva I. G.2, Smirnov M. S.2, Aslanov S. V.2, Ovchinnikov O. V.2
1V.I. Vernadsky Crimean Federal University, Simferopol, Russia
2Voronezh State University, Voronezh, Russia
Email: mazinovas@cfuv.ru

PDF
This paper presents studies of the electrical properties of thin-film layers of colloidal silver selenide quantum dots (Ag2Se), as well as heterostructures based on fullerene C60 and Ag2Se. The synthesis of materials, the technique for obtaining thin films and heterostructures are described. The study of conductive properties was carried out by analyzing the current-voltage characteristics. It is shown that thin films of Ag2Se in the Al-C60-Ag2Se-ITO sandwich structure system have unique current-voltage characteristics, in particular, they have current instability with inversion of the sign of the flowing current. Implementation of the heterostructure in the Al-Ag2Se-ITO system makes it possible to stabilize and enhance this effect. Keywords: Ag2Se, thin-film structures, voltage-current characteristics, current instability.
  1. Z. Zhang, Y. Yang, J. Gao, S. Xiao, C. Zhou, D. Pan, G. Liu, X. Guo, Mater. Today Energy, 7, 27 (2018). DOI: 10.1016/j.mtener.2017.11.005
  2. Y. Yang, D. Pan, Z. Zhang, T. Chen, H. Xie, J. Gao, X. Guo, J. Alloys Compd., 766, 925 (2018). DOI: 10.1016/j.jallcom.2018.07.022
  3. J. Ma, M. Chen, S. Qiao, J. Chang, G. Fu, S. Wang, ACS Photon., 9 (6), 2160 (2022). DOI: 10.1021/acsphotonics.2c00474
  4. J. Gao, L. Miao, H. Lai, S. Zhu, Y. Peng, X. Wang, K. Koumoto, H. Cai, iScience, 23 (1), 100753 (2019). DOI: 10.1016/j.isci.2019.100753
  5. K.H. Lim, K.W. Wong, Y. Liu, Y. Zhang, D. Cadavid, A. Cabot, K.M. Ng, J. Mater. Chem. C, 7 (9), 2646 (2019). DOI: 10.1039/C9TC00163H
  6. J. Niu, T. Chen, G. Liang, H. Ma, X. Zhang, P. Fan, Z. Zheng, Mater. Lett., 312, 131662 (2022). DOI: 10.1016/j.matlet.2022.131662
  7. P. Jood, R. Chetty, M. Ohta, J. Mater. Chem. A, 8 (26), 13024 (2020). DOI: 10.1039/D0TA02614J
  8. C. Jiang, Y. Ding, K. Cai, L. Tong, Y. Lu, W. Zhao, P. Wei, ACS Appl. Mater. Interfaces, 12 (8), 9646 (2020). DOI: 10.1021/acsami.9b21069
  9. J.-J. Ma, M.-X. Yu, Z. Zhang, W.-G. Cai, Z.-L. Zhang, H.-L. Zhu, Q.-Y. Cheng, Z.-Q. Tian, D.-W. Pang, Nanoscale, 10 (22), 10699 (2018). DOI: 10.1039/C8NR02017E
  10. M. Park, D. Choi, Y. Choi, H. Shin, K.S. Jeong, ACS Photon., 5 (5), 1907 (2018). DOI: 10.1021/acsphotonics.8b00291
  11. C.F. Pereira, I.M.A. Viegas, I.G. Souza Sobrinha, G. Pereira, G.A.L. Pereira, P. Krebs, B. Mizaikoff, J. Mater. Chem. C, 8 (30), 10448 (2020). DOI: 10.1039/D0TC02653K
  12. R. Bera, D. Choi, Y.S. Jung, H. Song, K.S. Jeong, J. Phys. Chem. Lett., 13 (26), 6138 (2022). DOI: 10.1021/acs.jpclett.2c01179
  13. S.B. Hafiz, M. Scimeca, P. Zhao, I.J. Paredes, A. Sahu, D.-K. Ko, ACS Appl. Nano Mater., 2 (3), 1631 (2019). DOI: 10.1021/acsanm.9b00069
  14. Y. Ding, Y. Qiu, K. Cai, Q. Yao, S. Chen, L. Chen, J. He, Nat. Commun., 10 (1), 841 (2019). DOI: 10.1038/s41467-019-08835-5
  15. J. Qu, N. Goubet, C. Livache, B. Martinez, D. Amelot, C. Greboval, A. Chu, J. Ramade, H. Cruguel, S. Ithurria, M.G. Silly, E. Lhuillier, J. Phys. Chem. C, 122 (31), 18161 (2018). DOI: 10.1021/acs.jpcc.8b05699
  16. W.-Y. Lee, S. Ha, H. Lee, J.-H. Bae, B. Jang, H.-J. Kwon, Y. Yun, S. Lee, J. Jang, Adv. Opt. Mater., 7 (22), 1900812 (2019). DOI: 10.1002/adom.201900812
  17. O.V. Ovchinnikov, I.G. Grevtseva, M.S. Smirnov, T.S. Kondratenko, A.S. Perepelitsa, S.V. Aslanov, V.U. Khokhlov, E.P. Tatyanina, A.S. Matsukovich, Opt. Quantum Electron., 52 (4), 198 (2020). DOI: 10.1007/s11082-020-02314-8
  18. A.S. Mazinov, A.S. Tyutyunik, V.S. Gurchenko, Prikl. Fiz., No. 2, 64 (2020) (in Russian)
  19. A.N. Gusev, A.S. Mazinov, A.S. Tyutyunik, I.Sh. Fitaev, V.S. Gurchenko, E.V. Braga, Tech. Phys., 66, 84 (2021). DOI: 10.1134/S1063784221010102
  20. A.N. Gusev, A.S. Mazinov, V.S. Gurchenko, A.S. Tyutyunik, E.V. Braga, Tech. Phys. Lett., 47, 377 (2021). DOI: 10.1134/S1063785021040180.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru