Temperature dependence of the spectra of optical constants of CdTe in the region of the absorption edge
Shvets V. A.
1,2, Marin D.V.
1,2, Yakushev M. V.
1, Rykhlitskii S.V.
11Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Email: shvets@isp.nsc.ru, marin@isp.nsc.ru, yakushev@isp.nsc.ru, rhl@isp.nsc.ru
In this work, the spectra of optical constants of epitaxial layers of cadmium telluride near the fundamental absorption edge are studied. For this purpose, ellipsometric measurements of the layers under study were carried out in a vacuum chamber in the temperature range from T = 38oC to 275oC. A numerical algorithm has been developed for solving the inverse ellipsometry problem for the structures under consideration, with the help of which the spectral dependences of the refractive index n(λ) and absorption index k(λ) are determined in the wavelength range from 700 to 1000 nm. The parametric dependences of k(λ, T) in the fundamental absorption region and in the transparency region are presented. The presence of an extended absorption tail in the transparency region was established, presumably associated with imperfections in the crystal structure. Keywords: ellipsometry, cadmium tellurium, spectra of optical constants, fundamental absorption edge, temperature.
- S. Adachi, T. Kimura, N. Suzuki. J. Appl. Phys., 74 (5), 3435 (1993). DOI: 10.1063/1.354543
- C.C. Kim, M. Daraselia, J.W. Garland, S. Sivananthan. Phys. Rev. B, 56 (8), 4786 (1997). DOI: 10.1103/PhysRevB
- L.A. Kosyachenko, V.M. Sklyarchuk, O.V. Sklyarchuk, O.L. Maslyanchuk. Semiconductors, 45 (10), 1273 (2011)
- A.I. Kashuba, B.V. Andrievskcd, H.A. Ilchuk, M. Piasecki, I.V. Semkiv, R.Yu. Petrus. Zh. Beloruss. Gos. Univ. Fiz., 2, 88 (2021) (in Russian). DOI: 10.33581/2520-2243-2021-2-88-95
- L. Verma, A. Rhare. In: 2022 IOP Conf. Ser.: Mater. Sci. Eng., 1263, 012017. DOI: 10.1088/1757-899X/1120/1/012019
- V.A. Shvets, I.A. Azarov, D.V. Marin, M.V. Yakushev, S.V. Rykhlitsky. Semiconductors, 53 (1), 132 (2019). DOI: 10.21883/FTP.2019.01.47001.8947
- D.V. Marin, V.A. Shvets, I.A. Azarov, M.V. Yakushev, S.V. Rykhlitskii. Infrared Phys. and Technol., 116. Article 103793 (2021). DOI: 10.1016/j.infrared.2021.103793
- Y. Chang, G. Badano, J. Zhao, Y.D. Zhou, R. Ashokan, C.H. Grein, V. Nathan. J. Electron. Mater., 33, 709 (2004). DOI: 10.1007/s11664-004-0070-5
- Yu.G. Sidorov, S.A. Dvoretskii, V.S. Varavin, N.N. Mikhailov, M.V. Yakushev, I.V. Sabinina. Semiconductors, 35 (9), 1045 (2001)
- E.V. Spesivtsev, S.V. Rykhlitskii, V.A. Shvets. Optoelectron., Instrum. Data Process., 47 (5), 419 (2011)
- R.M.A. Azzam, N.M. Bashara. Ellipsometry and Polarized Light (North-Holland, 1977)
- S. Adachi. Optical constants of crystalline and amorphous semiconductors: Numerical data and graphical information (Kluwer Academic Publishers, Boston/Dresden/London, 1999). DOI: 10.1007/978-1-4615-5247-5
- D.A.G. Bruggeman. Ann. Phys., 416 (7), 636 (1935). DOI: 10.1002/andp.19354160705
- H. Kuzmany. Solid-State Spectroscopy: An Introduction (Springer-Verlag, Berlin-Heidelberg-N.Y., 1998). DOI: 10.1007/978-3-642-01479-6
- Y. Chang, S. Guna, C.H. Grein, S. Velicu, M.E. Flatte, V. Nathan, S. Sivananthan. J. Electron. Mater., 36 (8), 1000 (2007). DOI: 10.1007/s11664-007-0162-0
- F. Urbach, Phys. Rev., 92, 1324 (1953)
- Y. Chang, G. Badano, J. Zhao, Y.D. Zhou, R. Ashokan, C.H. Grein, V. Nathan. J. Electron. Mater., 33, 709 (2004). DOI: 10.1007/s11664-004-0070-5
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