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Semipolar wide-band III-N-layers on a silicon substrate: orientation controlling epitaxy and the properties of structures (review)
Russian version
Bessolov V.N.1, Konenkova E.V.1
1Ioffe Institute, St. Petersburg, Russia
Email: lena@triat.ioffe.ru
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The experimental results of the recent years on the synthesis of semipolar wide-band III-N-layers on a nanostructured silicon substrate are summarized. The idea of synthesis involves the formation of Si(111) side walls on the silicon surface, then the epitaxial nucleation of the layer in the " direction of the crystal, followed by the fusion of blocks in the semipolar direction of the surface. Examples of orientation controlling epitaxy of semipolar AlN(10-11)-, GaN(10-11)-, GaN(11-22)-layers synthesized on nanostructured Si(100), Si(113) substrates by methods of metalorganic vapor phase epitaxy and hydride vapor phase epitaxy are shown. The review presents a summary and the prospects for further developments in the field of optoelectronics based on the platform - "semipolar GaN on Si". Keywords: wide-band semipolar III-N-layers, orientation controlling epitaxy, nanostructured silicon substrate
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