Volumes and Issues
Home » Technical Physics » Year 2023, issue 10 » Article p. 1345
<<<>>>
Determination of the Band Structure and Conductivity of the Si@O@Al Nanocomposite
Russian version
A. S. Rudy1, A. B. Churilov1, S. V. Kurbatov1, A. A. Mironrenko1, V. V. Naumov1, E. A. Kozlov1
1Demidov State University, Yaroslavl, Russia
Email: rudy@uniyar.ac.ruabchurilov@mail.rukurbatov-93@bk.ru
PDF
The purpose of this work is to study the characteristics of the junction between the titanium down conductor of a thin-film solid-state lithium-ion battery (a-Si) and a negative Si@O@Al nanocomposite electrode. The results of measuring the band gap of the Si@O@Al nanocomposite and the height of the Schottky barrier of the Ti-Si@O@Al junction are presented. The transmission and reflection spectra of Si@O@Al films and its main phases a-Si, a-SiOx and a-Si(Alx) are studied. The band gap of Si@O@Al was determined by the Tauc method, which is 1.52 eV for a-Si and 1.15 eV for nc-Si. The IV characteristics of Ti|Si@O@Al, Ti|a-Si, Ti|a-SiO0.8, and Ti|a-Si0.9(Al0.1) structures have been studied and the height of the Schottky barrier has been determined. The results obtained make it possible to estimate the Fermi energy of the nanocomposite and to interpret the hike in the SSLIB charging voltage as a result of the Al acceptor impurity compensation during lithiation. A change in the majority charge carriers in Si@O@Al leads to a decrease in the hole current and an increase in the density of the over-barrier electron current, as a result of which a step with a height of 1.5 V is formed on the charging curve. Keywords: nanocomposite, amorphous silicon, solid solution, optical band gap, Tauc plot, current-voltage characteristic, Schottky barrier, electron affinity, varistor effect.
  1. X. Yu, J. Bates, G. Jellison, F. Hart. J. Electrochem. Soc., 144 (2), 524 (1997). DOI: 10.1149/1.1837443
  2. A.A. Mironenko, I.S. Fedorov, A.S. Rudy, V.N. Andreev, D.Yu. Gryzlov, T.L. Kulova, A.M. Skundin. Monatshefte fur Chemie-Chemical Monthly, 150 (10), 1753 (2019). DOI: 10.1007/s00706-019-02497-1
  3. T.L. Kulova, A.A. Mironenko, A.S. Rudy, A.M. Skundin, All Solid State Thin-Film Lithium-Ion Batteries. Materials, Technology, and Diagnostics (CRC Press, Boca Raton, 2021), DOI: 10.1201/9780429023736
  4. A.S. Rudyi, A.A. Mironenko, V.V. Naumov, A.B. Churilov. Pis'ma v ZHTF, 48 (12), 32 (2022) (in Russian). DOI: 10.21883/PJTF.2022.12.52676.19188
  5. A.S. Rudy, A.B. Churilov, A.A. Mironenko, V.V. Naumov, S.V. Kurbatov, E.A. Kozlov. Pis'ma v ZHTF, 48 (17), 9 (2022) (in Russian). DOI: 10.21883/PJTF.2022.17.53279.19276
  6. D.A. Drabold, U. Stephan, J. Dong, S.M. Nakhmanson. J. Mol. Graphics Mod., 17 (5-6), 285 (1999). DOI: 10.1016/S1093-3263(99)00036-4
  7. B.A. Golodenko, A.B. Golodenko. Vestn. Voronezh. Gos. Univ. Inzh. Tekhnol., 2, 65 (2014) (in Russian). https://cyberleninka.ru/article/n/modelirovanieelekt-ronnoy-struktury-i-raschyot-osnovnyh-elektro-fizicheskihpa- rametrov-amorfnogo-kremniya
  8. J. Tauc, R. Grigorovic, A. Vancu. Phys. Stat. Sol. (b), 15 (2), 627 (1966). DOI: 10.1002/pssb.19660150224
  9. D.E. Aspnes, A.A. Studna. Phys. Rev. B, 27 (2), 985 (1983). DOI: 10.1103/PhysRevB.27.985
  10. A.P. Babichev, N.A. Babushkina, A.M. Bratkovsky, M.E. Brodov, M.V. Bystrov, B.V. Vinogradov, L.I. Vinokurova, E.B. Gelman, A.P. Geppe, I.S. Grigoryev, K.G. Gurtovoy, V.S. Egorov, A.V. Eletsky, L.K. Zarembo, V.Y. Ivanov, V.L. Ivashintseva, V.V. Ignatiev, R.M. Imamov, A.V. Inyushkin, N.V. Kadobnova, I.I. Karasik, K.A. Kikoin, V.A. Krivoruchko, V.M. Kulakov, S.D. Lazarev, T.M. Lifshits, Yu.E. Lubarsky, S.V. Marin, I.A. Maslov, E.Z. Meilikhov, A.I. Migachev, S.A. Mironov, A.L. Musatov, Yu.P. Nikitin, L.A. Novitsky, A.I. Obukhov, V.I. Ozhogin, R.V. Pisarev, Yu.V. Pisarevsky, V.S. Ptuskin, A.A. Radzig, V.P. Rudakov, B.D. Summ, R.A. Sunyaev, M.N. Khlopkin, I.N. Khlustikov, V.M. Cherepanov, A.G. Chertov, V.G. Shapiro, V.M. Shustriakov, S.S. Yakimov, V.P. Yanovsky. Fizicheskie velichiny: Spravochnik. Ed. by I.S. Grigor'ev, E.Z. Meilikhov (Energoatomizdat, M., 1991) (in Russian)
  11. W. Jacob, A. von Keudell, T. Schwarz-Selinger. Braz. J. Phys., 30 (3), 508 (2000). DOI: 10.1590/S0103-97332000000300006
  12. I.P. Herman. Optical Diagnostics for Thin Film Processing (Academic Press, NY., 1996), DOI: 10.1016/B978-0-12-342070-1.X5000-1
  13. Yu.I. Ukhanov. Opticheskiye svoystva poluprovodnikov (Nauka, M., 1977) (in Russian)
  14. L.P. Pavlov. Metody izmereniya parametrov poluprovodnikovyh materialov (Vysshaya shkola, M., 1987) (in Russian)
  15. M.N. Solovan, V.V. Brus, E.V. Maistruk, P.D. Maryanchuk. Inorg. Mater., 50 (1), 40 (2014). DOI: 10.1134/S0020168514010178
  16. Z. Ghorannevis, E. Akbarnejad, M. Ghoranneviss. J. Theor. Appl. Phys., 10, 25 (2016). DOI: 10.1007/s40094-016-0219-7
  17. M.F. Hasaneen, Z.A. Alrowaili, W.S. Mohamed. Mater. Res. Express, 7 (1), 016422 (2020). DOI: 10.1088/2053-1591/ab6779
  18. M. Cesaria, A.P. Caricato, M. Martino. Appl. Phys. Lett., 105 (3), 031105 (2014). DOI: 10.1063/1.4890675
  19. R.A. Street. Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, 1991), DOI: 10.1017/CBO9780511525247
  20. F.L. Marti nez, A. Prado, I. Martil, G. Gonzalez-Di az, B. Selle, I. Sieber. J. Appl. Phys., 86 (4), 2055 (1999). DOI: 10.1063/1.371008
  21. D.E. Carlson, C.R. Wronski. Appl. Phys. Lett., 28 (11), 671 (1976). DOI: 10.1063/1.88617
  22. L.A. Mazaletsky Issledovaniye vliyaniya struktury i fazovogo sostava nanokompozitov na osnove kremniya na protsessy vnedreniya i ekstraktsii litiya. Kand. diss. (MIFI, Moscow, 2022) (in Russian)
  23. T. Searle (ed.). Properties of Amorphous Silicon and its Alloys (London, INSPEC, IEE, 1998)
  24. E.V. Parinova. Elektronno-energeticheskoe stroenie i fazovyj sostav amorfnyh nanokompozitnyh plenok a-SiO_x-a-Si : H. Kand. diss. (VGU, Voronezh, 2016) (in Russian)
  25. J. Racko, J. Pechav cek, M. Mikolav sek, P. Benko, A. Grmanova, L. Harmatha, J. Breza. Radioengineering, 22 (1), 240 (2013)
  26. C.I. Ukan, R.V. Kruzelecky, D. Racansky, S. Zukotynski, J.M. Perz. J. Non-Cryst. Solids, 103 (1), 131 (1988). DOI: 10.1016/0022-3093(88)90425-5
  27. S. Dinca, G. Ganguly, Z. Lu, E.A. Schiff, V. Vlahos, C.R. Wronski, Q. Yuan. Mat. Res. Soc. Symp. Proc., 762, A7.1.1 (2003). https://core.ac.uk/reader/215686760
  28. R.J. Loveland, W.E. Spear, A. Al-Sharbaty. J. Non-Cryst. So- lids, 13 (1), 55 (1974). DOI: 10.1016/0022-3093(73)90035-5
  29. S.S. Nekrashevich, V.A. Gritsenko. Phys. of the Solid State, 56 (2), 207 (2014). DOI: 10.1134/S106378341402022X

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru