Anomalous fast luminescence of CsCeSiS4 thiosilicate
Pustovarov V. A. 1, Tavrunov D. A. 1, Tarasenko M.S. 2, Naumov N.G. 2
1Ural Federal University after the first President of Russia B.N. Yeltsin, Yekaterinburg, Russia
2Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: v.a.pustovarov@urfu.ru, mr.tavrunov@mail.ru, tarasen@niic.nsc.ru, naumov@niic.nsc.ru

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CsCeSiS4 thiosilicate single crystals were obtained by high-temperature flux synthesis. The absorption spectrum in the region of 450 nm is formed by f-> d transitions in the Ce3+ ion. The nonelementary 5d-> 4f band of Ce3+ ion emission is observed in the photo- and X-ray excited luminescence spectra in the region of 520 nm at temperatures of 5-330 K. The inertialess luminescence decay kinetics upon excitation by X-ray synchrotron radiation is characterized by a dominant component with a decay time tau=0.88 ns. The luminescence of Ce3+ ions is efficiently excited by the intracenter way or due to the recombination of band charge carriers. Keywords: Ce3+ ion, luminescence decay kinetics, interconfigurational transitions, synchrotron radiation.
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