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Anomalous fast luminescence of CsCeSiS4 thiosilicate
Pustovarov V. A.
1, Tavrunov D. A.
1, Tarasenko M.S.
2, Naumov N.G.
2
1Ural Federal University after the first President of Russia B.N. Yeltsin, Yekaterinburg, Russia
2Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Email: v.a.pustovarov@urfu.ru, mr.tavrunov@mail.ru, tarasen@niic.nsc.ru, naumov@niic.nsc.ru
CsCeSiS4 thiosilicate single crystals were obtained by high-temperature flux synthesis. The absorption spectrum in the region of 450 nm is formed by f-> d transitions in the Ce3+ ion. The nonelementary 5d-> 4f band of Ce3+ ion emission is observed in the photo- and X-ray excited luminescence spectra in the region of 520 nm at temperatures of 5-330 K. The inertialess luminescence decay kinetics upon excitation by X-ray synchrotron radiation is characterized by a dominant component with a decay time tau=0.88 ns. The luminescence of Ce3+ ions is efficiently excited by the intracenter way or due to the recombination of band charge carriers. Keywords: Ce3+ ion, luminescence decay kinetics, interconfigurational transitions, synchrotron radiation.
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