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Hall effect and quantum oscillations of magnetoresistivity in the topological insulator Bi2Se3. The role of bulk and surface carriers
Russian version
Fominykh B. M.1, Perevalova A. N.1, Naumov S. V.1, Chistyakov V. V.1, Marchenkov V. V.1
1M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
Email: bogdan.fominyh@mail.ru
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At temperatures of 5 and 10 K and in magnetic fields up to 9 T, the field dependences of the magnetoresistivity and Hall resistivity of a topological insulator Bi2Se3 single crystal were measured. It was shown, that the Hall effect is due to bulk carriers, while the Shubnikov-de Haas oscillations are associated with two-dimensional carriers. Keywords: Bi2Se3 single crystal, crystal growth, Shubnikov-de Haas oscillations, Berry phase, Fermi surface.
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