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Formation of SmS nanostructures in anodized aluminum oxide matrix
Russian version
Baskakov E. B. 1, Supelnyak S. I. 1, Khmelenin D. N. 1
1National Research Center “Kurchatov Institute”, Moscow, Russia
Email: baskakov.ras@gmail.com
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The matrices made of anodized aluminum oxide with a pore diameter of 40-140 nm and 60-210 nm are made by anodizing aluminum using a two-stage method. The distribution of oxide cells and pores of matrices by diameter is presented. It was found that an increase in the etching time led to an increase in the statistical maximum of the average pore diameter from 108 to 155 nm. It was found that an increase in the pore diameter during etching is accompanied by a preservation of the size of the oxide cells and a decrease in the average thickness of the cell walls. Sic nanostructures formed in the pores of the matrices and extending to an average depth of 120 nm were obtained by magnetron sputtering. It is assumed that a conductive channel is formed in the form of a thin SmS layer connecting SmS nanostructures and a barrier layer of anodized aluminum oxide. The resistance of SmS nanostructures in a matrix of anodized aluminum oxide with Ni metallization was measured, which amounted to 23 and 22 Ω. Keywords: anodized aluminum oxide, samarium sulfide, magnetron sputtering, nanostructures.
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