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Way to increase the used part of radiation of color centers in diamond
Russian version
Kukushkin V. A. 1,2, Kukushkin Yu. V.2
1Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, Nizhny Novgorod, Russia
2Lobachevsky University of Nizhny Novgorod, Nizhny Novgorod, Russia
Email: vakuk@ipfran.ru, yuriy.kukushkinn@gmail.com
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A way to increase the extracted and collected part of the radiation of color centers in diamond is suggested. It is based on the concentration of this radiation in modes, formed in a plane waveguide consisting of the upper surface of a diamond sample (from which they are reflected due to the total internal reflection effect) and a periodic sequence of low and highly boron doped layers with slightly different refraction indices (from which they are reflected due to the Bragg effect) lying below. The radiation contained in these modes are partly extracted through the upper surface of a diamond sample by means of the frustrated total internal reflection method. For a particular example of NV-centers by numerical modelling it is shown that the suggested way allows to increase the part of their radiation extracted from diamond by more than 2 times. In the same time it does not lead to the deterioration of the NV-center parameters important for applications and remains efficient for any coordinates of these centers in the diamond sample plane and for their high concentrations. Keywords: Bragg effect, diamond, NV-center.
  1. C. Bradac, T. Gaebel, J.R. Rabeau. In: Optical Engineering of Diamond, ed. by R.P. Mildren and J.R. Rabeau (Wiley-VCH Verlag \& Co. KGaA, Weinheim, Germany, 2013), p. 143-176
  2. C. Bradac, W. Gao, J. Forneris, M.E. Trusheim, I. Aharonovich. Nature Commun., 10, 5625 (2019). DOI: 10.1038/s41467-019-13332-w
  3. J.H.N. Loubser, J.A. van Wyk. Rep. Prog. Phys., 41, 1201 (1978). DOI: 10.1088/0034-4885/41/8/002
  4. S. Takahashi, R. Hanson, J. van Tol, M.S. Sherwin, D.D. Awschalom. Phys. Rev. Lett., 101, 047601 (2008). DOI: 10.1103/PhysRevLett.101.047601
  5. A. Jarmola, V. Acosta, K. Jensen, S. Chemerisov, D. Budker. Phys. Rev. Lett., 108, 197601 (2012). DOI: 10.1103/PhysRevLett.108.197601
  6. J.R. Maze, P.L. Stanwix, J.S. Hodges, S. Hong, J.M. Taylor, P. Cappellaro, L. Jiang, M.V. Gurudev Dutt, E. Togan, A.S. Zibrov, A. Yacoby, R.L. Walsworth, M.D. Lukin. Nature, 455, 644 (2008). DOI: 10.1038/nature07279
  7. L. Childress, M.V. Gurudev Dutt, J.M. Taylor, A.S. Zibrov, F. Jelezko, J. Wrachtrup, P.R. Hemmer, M.D. Lukin. Science, 314, 281 (2006). DOI: 10.1126/science.1131871
  8. O. Madelung. Semiconductors: Data Handbook (Springer, New York, 2004)
  9. D. Le Sage, L.M. Pham, N. Bar-Gill, C. Belthangady, M.D. Lukin, A. Yacoby, R.L. Walsworth. Phys. Rev. B, 85, 121202(R) (2012). DOI: 10.1103/PhysRevB.85.121202
  10. P. Siyushev, F. Kaiser,V. Jacques, I. Gerhardt, S. Bischof, H. Fedder, J. Dodson, M. Markham, D. Twitchen, F. Jelezko, J. Wrachtrup. Appl. Phys. Lett., 97, 241902 (2010). DOI: 10.1063/1.3519849
  11. A. Beveratos, R. Brouri, T. Gacoin, J.-P. Poizat, P. Grangier. Phys. Rev. A, 64, 061802 (2001). DOI: 10.1103/PhysRevA.64.061802
  12. T.M. Babinec, B.J.M. Hausmann, M. Khan, Y. Zhang, J.R. Maze, P.R. Hemmer, M. Loncar. Nat. Nanotechnol., 5, 195 (2010). DOI: 10.1038/nnano.2010.6
  13. J. Tisler, G. Balasubramanian, B. Naydenov, R. Kolesov, B. Grotz, R. Reuter, J.-P. Boudou, P.A. Curmi, M. Sennour, A. Thorel, M. Borsch, K. Aulenbacher, R. Erdmann, P.R. Hemmer, F. Jelezko, J. Wrachtrup. ACS Nano, 3, 1959 (2009). DOI: 10.1021/nn9003617
  14. S. Zhu, A.W. Yu, D. Hawley, R. Roy. Am. J. Phys., 54, 601 (1986). DOI: 10.1119/1.14514
  15. N.W. Ashcroft, N.D. Mermin. Solid State Physics (Holt, Rinehart and Winston, New York, 1976), ch. 1
  16. V.A. Kukushkin. Phys. St. Sol. B, 257 (9), 1900748 (2020). DOI: 10.1002/pssb.201900748
  17. V.A. Kukushkin. Appl. Phys. A, 123 (10), 663 (2017). DOI: 10.1007/s00339-017-1274-x
  18. A. Yariv, P. Yeh. Optical Waves in Crystals (Wiley, New York, 2002), ch. 6
  19. V.B. Berestetskii, E.M. Lifshitz, L.P. Pitaevskii. Quantum Electrodynamics (Pergamon, Oxford, 1982), 62
  20. O. Svelto. Principles of Lasers (Plenum Press, New York, 1989), ch. 4
  21. V.A. Kukushkin, M.A. Lobaev, D.B. Radischev, S.A. Bogdanov, M.N. Drozdov, V.A. Isaev, A.L. Vikharev, A.M. Gorbachev. J. Appl. Phys., 120 (22), 224901 (2016). DOI: 10.1063/1.4971343

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