Physics of the Solid State
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Photoelectric properties of structures with GeSiSn|Ge multiple quantum wells and relaxed GeSiSn layers
Timofeev V. A.
1, Skvortsov I. A.
1, Mashanov V. I.
1, Bloshkin A. A.
1, Kirienko V. V.
1, Loshkarev I. D.
1, Zalyalov T. M.
1,2, Perevalov T. V.
1, Islamov D. R.
1,2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Email: vyacheslav.t@isp.nsc.ru, i.skvortsov@isp.nsc.ru, mash@isp.nsc.ru, bloshkin@isp.nsc.ru, victor@isp.nsc.ru, idl@isp.nsc.ru, damir@isp.nsc.ru, timson@isp.nsc.ru
The photoelectric properties of p-i-n photodiodes including GeSiSn|Ge multiple quantum wells (MQWs) and relaxed GeSiSn layers on a Ge(1 0 0) substrate have been studied. Based on current-voltage characteristic measurements, it is shown that the lowest density of the dark current of p-i-n photodiodes with a reverse bias of 1 V reaches a value of 0.7 mA/cm2. The cut-off wavelength for both diodes with MQWs and relaxed layers is about 2 μm (~ 0.6 eV). Keywords: molecular beam epitaxy, multiple quantum wells, relaxed layer, diffraction reflection curve, photodiode, photocurrent, dark current, sensitivity limit.
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