Synthesis of textured barium hexaferrite films on silicon substrates with amorphous Al2O_3|Si3N4 coating
Kostishyn V. G.1, Mironovich A. Yu.1, Timofeev A. V.1, Skorlupin G. A.1, Ril A. I.2
1National University of Science and Technology MISiS, Moscow, Russia
2Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia
Email: mironovich.ai@misis.ru
BaFe12O19 thin films were synthesized by ion-beam sputtering on amorphous Al2O_3|Si3N4 structures. Immediately after sputtering, the BaFe12O19 films are amorphous, but can be converted to a crystalline state by annealing. In this case, under certain conditions, a (00l) texture spontaneously forms in such films, which allows them to be used for designing and creating planar microwave devices, spintronics and magnetic memory devices. However, due to heat treatment, mechanical stresses arise in the BaFe12O19|Al2O_3|Si3N4 structure, leading to the formation of macroscopic defects. In this work, we study the possibility of reducing stresses by additional annealing of the Al2O3 and Si3N4 layers at 900oC and varying the Al2O3 thickness in order to obtain defect-free BaFe12O19 (00l) films. Keywords: Hexagonal ferrite, Thin films, Surface morphology, Ion-beam deposition, Crystallographic texture.
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