Krichevtsov B. B.1, Korovin A. M.1, Suturin S. M.1, Levin A. A.1, Sokolov N. S.1, Fedorov V. V.2, Telegin A. V.3, Shishkin D. A.3
1Ioffe Institute, St. Petersburg, Russia
2Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
3M.N. Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, Russia
Email: boris@mail.ioffe.ru
Epitaxial films of BaM hexaferrite (BaFe12O19) with a thickness of 50 nm were grown on R-cut sapphire α-Al2O3 (01-12) substrates by laser molecular beam epitaxy (LMBE). Their crystal structure and magnetic properties were studied before and after post-growth annealing. It was found that in the annealed films obtained by the LMBE method, the easy axis of magnetic anisotropy is deviated from the normal to the surface, which makes it possible to switch the magnetization with both normal and tangential magnetic fields, and leads to the dependence of the hysteresis loop shape on the field orientation in the film plane. Keywords: hexaferrites, thin films, magnetization processes, laser molecular beam epitaxy.
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