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Handling of InGaAs quantum well parameters in the active region of near-IR LEDs (850-960 nm)
Russian version
Salii R. A. 1, Malevskaya A. V. 1, Malevskii D. A.1, Mintairov S. A. 1, Nadtochiy A. M.1, Kalyuzhnyy N. A. 1
1Ioffe Institute, St. Petersburg, Russia
Email: r.saliy@mail.ioffe.ru, Anmalevskaya@mail.ioffe.ru, dmalevsky@scell.ioffe.ru, mintairov@scell.ioffe.ru, al.nadtochy@mail.ioffe.ru, nickk@mail.ioffe.ru
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The flexible control of the radiation wavelength of InxGa1-xAs/Al0.3Ga0.7As multiple quantum wells for active area of near-IR LEDs (850-960 nm) has been experimentally demonstrated by changing their thickness and composition x. Heterostructures with multiple quantum wells demonstrating high photoluminescence intensity have been obtained using the MOVPE technique. Due to a unified post-growth technology of transferring heterostructures to a carrier-substrate and identical installation procedures, the manufactured LEDs demonstrated close electro-optical characteristics: efficiency from 50 to 54% and external quantum efficiency from 48 to 50%. Keywords: quantum well, LED, InGaAs, MOVPE, heterostructures.
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