Phase separation effects in AlGaAsSb/GaSb alloys
Levin R. V. 1, Popova T. B. 1, Vlasov A. S. 1
1Ioffe Institute, St. Petersburg, Russia
Email: lev.vpegroup@mail.ioffe.ru

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Layers of AlxGa1-xAsySb1-y solid solutions on GaSb substrates were obtained by the MOVPE method. Three series of samples with an Al content of x=0.2, 0.27 and 0.45 and different y content providing both positive and negative lattice matching with the substrate were studied. Analysis of Raman scattering spectra showed the presence of phase separation effects for both Group V (Sb-As) and Group III elements a tendency towards preferential binding of As and Al atoms was detected. Keywords: MOVPE, Raman scattering, AlGaAsSb, phase separation.
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