Formation of nanoporous germanium layers on thin films obtained by ion-assisted deposition
Stepanov А. L. 1, Fasizrakhmanov I. A. 1, Nuzhdin V. I. 1, Valeev V. F. 1, Konovalov D. A. 1, Rogov A. M. 1
1Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia
Email: aanstep@gmail.com
The present study is aimed to test a possibility for formation of nanoporous a-Ge layers by implantation with Ag+ ions thin amorphous film a-Ge obtained by the original method of ion-assisted deposition. For this purpose, c-Ge target was sputtered with low-energy Xe+ ions onto a quartz glass substrate coated with a conductive Ni layer. Ion implantation was performed at an energy of E=30 keV, a current density of J=5 μA/cm2 and doses of D=2.0· 1016 and 6.0· 1016 ion/cm2. Electron microscopy and optical reflectance spectroscopy were used to analyze the formed material. It was shown that at a low implantation dose the film surface remains smooth, whereas an increase in the dose leads to the formation of a nanoporous Ge layer consisting of needle-like structures randomly located in the plane of the sample surface. Keywords: nanoporous germanium, ion-assisted deposition, ion implantation.
- P. Selinis, F. Farmakis, J. Electrochem. Soc., 169, 10526 (2022). DOI: 10.1149/1945-7111/ac49cc
- M. Yanilmaz, G. Cihanbeyoglu, J. Kim, ACS Omega, 8, 16987 (2023). DOI: 10.1021/acsomega.3c00990
- Y. Zhang, N. Zhou, X. Liu, X. Gao, S. Fang, Dalton Trans., 51, 14767 (2022). DOI: 10.1039/d2dt01528e
- Z. Zhou, W. Liu, Y. Guo, H. Huang, X. Ding, Coatings, 12, 1652 (2022). DOI: 10.3390/coatings12111653
- R. Zegadi, N. Lorrain, S. Meziani, Y. Dumeige, L. Bodiou, M. Guendouz, A. Zegadi, J. Charrier, Sensors, 22, 844 (2022). DOI: 10.3390/s22030844
- P. Blond, R. Bevernaegie, L. Troian-Gautier, C. Lagrost, J. Hubert, F. Reniers, V. Raussens, I. Jabin, Langmuir, 36, 12068 (2020). DOI: 10.1021/acs.langmuir.0c02681
- V.G. Evtugin, A.M. Rogov, L.R. Valeeva, N.N. Khabirova, V.I. Nuzhdin, V.F. Valeev, A.L. Stepanov, Vacuum, 177, 109403 (2020). DOI: 10.1016/j.vacuum.2020.109403
- M.E. Koleva, M. Dutta, N. Fukata, Mater. Sci. Eng. B, 187, 102 (2014). DOI: 1.1016/j.mseb.2014.05.008
- A.L. Stepanov, V.I. Nuzhdin, A.M. Rogov, V.V. Vorob'ev, Formirovanie sloev poristogo kremniya i germaniya s metallicheskimi nanochastitsami (FITsPRESS, Kazan, 2019) (in Russian)
- G. Impellizzeri, L. Romano, L. Bosco, C. Spinella, M.G. Grimaldi, Appl. Phys. Express, 5, 035201 (2012). DOI: 10.1143/APEX.5.035201
- I.M. Klimovich, A.L. Stepanov, Lett. Mater., 13, 243 (2023). DOI: 10.22226.2410-3535-2023-3-243-248
- A.L. Stepanov, Appl. Phys. A, 127, 629 (2006). DOI: 10.1007/s00339-021-04789-y
- N.M. Lyadov, V.V. Bazarov, I.R. Vakhitov, A.I. Gumarov, Sh.Z. Ibragimov, D.M. Kuzina, I.A. Faizrakhmanov, R.I. Khaibullin, V.A. Shustov, Phys. Solid State, 63, 1723 (2021). DOI: 10.1134/S1063783421100231
- A.L. Stepanov, V.A. Zhikharev, D.E. Hole, P.D. Townsend, Nucl. Instrum. Meth. Phys. Res. B, 166, 26 (2000). DOI: 10.1016/S0168-583X(99)00641-2
- T.P. Gavrilova, V.F. Valeev, V.I. Nuzhdin, A.M. Rogov, D.A. Konovalov, S.M. Khantimerov, A.L. Stepanov, Tech. Phys., 69 (4), 578 (2024). DOI: 10.61011/JTF.2024.04.57532.276-23
- J. Tauc, Prog. Semicond., 9, 89 (1965)
- H. Liu, S. Li, P. Sun, X. Yang, D. Liu, Y. Ji, F. Zhang, D. Chen, Y. Cui, Mater. Sci. Semicond. Proc., 83, 58 (2018). DOI: 10.1016/j.mssp.2018.04.019
- K.L. Bhatia, P. Singh, M. Singh, N. Kishore, N.C. Mehra, D. Kanjilal, Nucl. Instrum. Meth. Phys. Res. B, 94, 379 (1994). DOI: 10.1016/0168-583X(94)95412-7
- S. Schicho, A. Jaouad, C. Sellmer, D. Morris, V. Aimez, R. Ares, Mater. Lett., 94, 86 (2013). DOI: 10.1016/j.matlet.2012.12.014
- C.F. Bohren, D.R. Huffman, Absorption and scattering of light by small particles (Wiley, N.Y., 1983).
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.