Change of the structure of dielectric spectra of vanadium dioxide films in case of chromium doping
Ilinskyi A.V.1, Castro R.A., Klimov V. A. 1, Kononov A. A. , Shadrin E. B.1
1Ioffe Institute, St. Petersburg, Russia
Email: ilinskiy@mail.ioffe.ru, recastro@yandex.ru, kononov_aa@icloud.com, shadr.solid@mail.ioffe.ru
It is shown that increasing the degree of chromium doping of thin VO2 films leads to a decrease in the frequencies of their dielectric spectra features and to an increase in the temperature of the semiconductor-metal phase transition. Based on the Debye formula, the parameters of the dielectric spectra are calculated using the Gavrilyak-Negami function. Macroscopic and microscopic analysis of the formation mechanism of experimental dielectric spectra features was carried out. The role of Cr-Cr-dimers of increased strength in the formation of spectra of heavily doped VO2:Cr film was revealed. Keywords: VO2 thin films, dielectric spectra.
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