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Home » Technical Physics Letters » Year 2025, issue 6 » Article p. 38
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Lasing in the InGaN/GaN/AlGaN disk microstructures on silicon
Russian version
Moiseev E. I. 1, Komarov S. D. 1, Ivanov K. A. 1, Tsatsul’nikov A. F. 2, Lutsenko E. V.3, Voinilovich A. G.3, Sakharov A. V.2,4, Arteev D. S.2,4, Nikolaev A. E.4, Zavarin E. E. 2,4, Masyutin D. A. 1, Pivovarova A. A.4, Ilyinskaya N. D.4, Smirnova I. P.4, Markov L. K.4, Zhukov A. E.1, Kryzhanovskaya N. V. 1
1HSE University, St. Petersburg, Russia
2Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
3B.I.Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk, Belarus
4Ioffe Institute, St. Petersburg, Russia
Email: emoiseev@hse.ru, skomarov@hse.ru, kivanov1992@gmail.com, dmasyutin@hse.ru
PDF
Microdisk lasers have been developed by using the InGaN/GaN semiconductor structure on Si substrate. Room-temperature lasing has been demonstrated in microlasers 5-8 μm in diameter operating under optical pumping in the pulsed regime on whispering gallery modes. The paper demonstrates a lasing wavelength shift from 406 to 425 nm due to a decrease in optical loss with increasing laser diameter within the gain band of the active region based on InGaN/GaN quantum wells. Keywords: disk cavity, III-N microlaser, whispering gallery modes, silicon microlaser.
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