Analytical models of depletion-layer capacitance of p-n junction in high-voltage of mesaepitaxial semiconductors structures
Suraykin A. I.1, Bespalov N. N.1, Suraykin A. A.1
1Ogarev Mordovian State University, Saransk, Russia
Email: suraykin@mail.ru, ka-mgu@mail.ru, mister.suraykin@mail.ru
The article describes the results of researching and calculation of total depletion-layer capacitance of high-voltage, mesaepitaxial diodes. It is shown how influences of peripheral of mesa region for magnitude of total depletion-layer capacitance of p-n junction in mesaepitaxial diodes structures it. Proposed of the analytical model of total depletion-layer capacitance of high-voltage, mesaepitaxial diodes structures, taking into account of the capacitance of peripheral of mesa region. The relations obtained of self-consistent of the analytical equations for the depletion-layer capacitance of mesa region for two options: for inclination angle constant of mesa chamfer; for variable angle inclination of mesa chamfer. Keywords: mesa-epitaxial diode, mesa-region, mesa-chamfer, depletion-layer capacitance, capacitance-voltage characteristic.
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