Bessolov V.N.1, Konenkova E. V.1, Kremleva A.V.2, Sokura L.A.1,2, Sharofidinov S.S.1, Scheglov M.P.1
1Ioffe Institute, St. Petersburg, Russia
2ITMO University, St. Petersburg, Russia
Email: lena@triat.mail.ioffe.ru
The epitaxial layers of AlN(1122) with a thickness of 3.9 μm were grown on a GaN(1122)/m-Al2O3 template by hydride vapour-phase epitaxy (HVPE). The template consisted of GaN(1122)- and buffer AlN s with thicknesses of 2.7 m and 0.6 μm, respectively, grown on a sapphire substrate of orientation (1010). It is shown that the full width at half maximum (FWHM) for the diffraction peaks of GaN(1122)/m-Al2O3 and AlN(1122) are 30 and 20 arc minutes, respectively. It was found that the epitaxy of AlN(1122) on the template leads to an increase in the size of crystal blocks in the AlN(1122) layer. It is assumed that the improvement in the quality of the AlN(1122) layer occurs due to its predominant growth in the tangential direction due to the relatively low lattice difference at the AlN(1122)/GaN(1122) heterogeneous boundary. Keywords::semipolar AlN(1122), hydride vapour-phase epitaxy.
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