Физика и техника полупроводников

Авторам

Правила оформления публикаций

Вышедшие номера

2024
- 1
2023
- 1 2 3 4 5 6 7 8 9
2022
- 1 2 3 4 5 6 7 8 9 10 11 12
2021
- 1 2 3 4 5 6 7 8 9 10 11 12
2020
- 1 2 3 4 5 6 7 8 9 10 11 12
2019
- 1 2 3 4 5 6 7 8 9 10 11 12
2018
- 1 2 3 4 5 6 7 8 9 10 11 12 13
2017
- 1 2 3 4 5 6 7 8 9 10 11 12
2016
- 1 2 3 4 5 6 7 8 9 10 11 12
2015
- 1 2 3 4 5 6 7 8 9 10 11 12
2014
- 1 2 3 4 5 6 7 8 9 10 11 12
2013
- 1 2 3 4 5 6 7 8 9 10 11 12
2012
- 1 2 3 4 5 6 7 8 9 10 11 12
2011
- 1 2 3 4 5 6 7 8 9 10 11 12
2010
- 1 2 3 4 5 6 7 8 9 10 11 12
2009
- 1 2 3 4 5 6 7 8 9 10 11 12
2008
- 1 2 3 4 5 6 7 8 9 10 11 12
2007
- 1 2 3 4 5 6 7 8 9 10 11 12
2006
- 1 2 3 4 5 6 7 8 9 10 11 12
2005
- 1 2 3 4 5 6 7 8 9 10 11 12
2004
- 1 2 3 4 5 6 7 8 9 10 11 12
2003
- 1 2 3 4 5 6 7 8 9 10 11 12
2002
- 1 2 3 4 5 6 7 8 9 10 11 12
2001
- 1 2 3 4 5 6 7 8 9 10 11 12
2000
- 1 2 3 4 5 6 7 8 9 10 11 12
1999
- 1 2 3 4 5 6 7 8 9 10 11 12
1998
- 1 2 3 4 5 6 7 8 9 10 11 12
1997
- 1 2 3 4 5 6 7 8 9 10 11 12
1996
- 1 2 3 4 5 6 7 8 9 10 11 12
1995
- 1 2 3 4 5 6 7 8 9 10 11 12
1994
- 1 2 3 4 5 6 7 8 9 10 11 12
1993
- 1 2 3 4 5 6 7 8 9 10 11 12
1992
- 1 2 3 4 5 6 7 8 9 10 11 12
1991
- 1 2 3 4 5 6 7 8 9 10 11 12
1990
- 1 2 3 4 5 6 7 8 9 10 11 12
1989
- 1 2 3 4 5 6 7 8 9 10 11 12
1988
- 1 2 3 4 5 6 7 8 9 10 11 12

Electrical properties of MOS capacitors formed by PEALD grown Al₂O₃ on silicon

Mahajan A.M.¹, Khairnar A.G.¹, Thibeault B.J.²

¹Department of Electronics, North Maharashtra University, Maharashtra, India
²ECE Department, University of California Santa Barbara, CA, USA

Поступила в редакцию: 23 мая 2013 г.

Выставление онлайн: 20 марта 2014 г.

PDF версия

Абстракт
Литература
Статистика просмотров

In the present work, we have grown 2.83 nm thin Al₂O₃ films directly on pre-cleaned p-Si(100) substrate using precursor Trimethyl Aluminium (TMA) with substrate temperature of 300^oC in a Plasma Enhanced Atomic Layer Deposition (PEALD) chamber. The MOS capacitors were fabricated by depositing Pt/Ti metal bilayer through shadow mask on Al₂O₃ high-k by electron beam evaporation system. The MOS devices were characterized to evaluate the electrical properties using a capacitance voltage (CV) set-up. The dielectric constant calculated through the CV analysis is 8.32 for Al₂O₃ resulting in the equivalent oxide thickness (EOT) of 1.33 nm. The flat-band shift of 0.3 V is observed in the CV curve. This slight positive shift in flat-band voltage is due to the presence of some negative trap charges in Pt/Ti/ALD-Al₂O₃/p-Si MOS capacitor. The low leakage current density of 3.08·10^-10 A/cm² is observed in the JV curve at 1 V. The Si/Al₂O₃ barrier height Phi_B and the value of J_FN are calculated to be 2.78 eV and 3.4· 10^-5 A/cm² respectively.

Pi-chun Juan, Chuan-hsi Liu, Cheng-li Lin, Shin-chun Ju, Main-gwo Chen Ingram Yin-ku Chang, and Jong-hong Lu. Jpn. J. Appl. Phys., 48, 05DA02 (2009)
H. Garcial, S. Duefias, H. Castan, A. Gomezl, L. Bailon', K. Kukli, T. Hatanpaa, J. Aarik, A. Aidla, M. Ritala, M. Leskelii. Proc. of the 2009 Spanish Conf. on Electron Devices (Febr. 11--13, 2009) c. 223
H.Y. Yu, M.F. Li, B. J. Cho, C.C. Yeo, M.S. Joo, D.-L. Kwong, J.S. Pan, C.H. Ang, J.Z. Zheng, S. Ramanathan. Appl. Phys. Lett., 81, 376 (2002)
M. Liu, G. Hea, L.Q. Zhu a, Q. Fang a,b, G.H. Li a, L.D. Zhang. Appl. Surf. Sci., 252, 6206 (2006)
Gang He, Zhaoqi Sun, Guang Li, Lide Zhan. Critical Rev. Sol. St. and Mater. Sci., 37, 131 (2012)
Chun Zhao, C.Z. Zhao, M. Werner, S. Taylor, P.R. Chalker. International Scholarly Research Network ISRN Nanotechnology, 2012, Article ID 689 023, 35 p
K.Y. Gao, F. Speck, K. Emtsev, Th. Seyller, L. Ley. J. Appl. Phys., 102, 094 503 (2007)
Liu Yan-Ping, Lan-Wei, He Zhi-Wei, Wang Yin-Yue. Chin. Phys. Lett., 23, 2236 (2006)
J.-Y. Son, S.-W. Jeong, K.-S. Kim, Yonghan Roh. J. Korean Phys. Soc., 51, S238 (2007)
J.C. Hackley, J.D. Demaree, T. Gougousi. Mater. Res. Soc. Symp. Proc., 1073, 1073-H04-19 (2008)
P.M. Tirmali, A.G. Khairnar, B.N. Joshi, A.M. Mahajan. Sol. St. Electron., 62, 44 (2011)
M. Sato, T. Aoyama, Y. Nara, Y. Ohji. Jpn. J. Appl. Phys. 48, 04C002 (2009)
J. Lappalainen, H.L. Tuller, V. Lantto. J. Electroceram., 13, 129 (2004)
M.-G. Blanchin, B. Canut, Y Lambert, V.S. Teodorescu, A. Barav u, M. Zaharescu. J. Sol-Gel Sci. Technol., 47, 165 (2008)
A.G. Khairnar, A.M. Mahajan. Bull. Mater. Sci., 36, 259 (2013)
Sandy X. Lao, Ryan M. Martin, Jane P. Chang. J. Vac. Sci. Technol. A, 23-3, 488 (2005)
Metal Ching-Huang Lu, Gloria M.T. Wong, Michael D. Deal, Wilman Tsai, Prashant Majhi, Chi On Chui, Mark R. Visokay, James J. Chambers, Luigi Colombo, Bruce M. Clemens, Yoshio Nish. IEEE Electron. Dev. Lett., 26-7 (2005)
A.G. Khairnar, A.M. Mahajan. Sol. St. Sci., 15, 24 (2013)
E.H. Oulachgar, C. Aktik, M. Scarlete, S. Dostie, R. Sowerby, S. Gujrathi. Appl. Phys. Lett., 101, 084 107 (2007)
H.J. Quah, K.Y. Cheong, Z. Hassan, Z. Lockman. IEEE Trans. Electron. Dev., 58, 122 (2011)
P. Laha, A.B. Panda, S. Dahiwale, K. Date, K.R. Patil, P.K. Barhai, A.K. Das, I. Banerjee, S.K. Mahapatra. Thin Sol. Films, 519, 1530 (2010)
K.Y. Cheong, J.H. Moon, H.J. Kim, W. Bahng, Nam-Kyun Kim. J. Appl. Phys., 103, 084 113 (2008)
W.J. Zhu, Tso-Ping Ma, Takashi Tamagawa, J. Kim, Y. Di. IEEE Electron. Dev. Lett., 23, 97 (2002)
M.D. Groner, J.W. Elam, F.H. Fabreguette, S.M. George. Thin Sol. Films, 413, 186 (2002)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Учредители

Издатель