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Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure

Bagraev N.T.^1,2, Danilovskii E.Yu.¹, Gets D.S.¹, Kalabukhova E.N.³, Klyachkin L.E.¹, Koudryavtsev A.A.¹, Malyarenko A.M.¹, Mashkov V.A.², Savchenko D.V.^3,4, Shanina B.D.³

¹A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia Ioffe Institute, St. Petersburg, Russia

²St. Petersburg State Polytechnical University, St. Petersburg, Russia

³Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
⁴Institute of Physics, Academy of Sciences of Czech Republic, Praha, Czech Republic

Поступила в редакцию: 29 октября 2014 г.

Выставление онлайн: 19 апреля 2015 г.

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We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the delta-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency generation from the delta-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (HF) lines in the ESR and EDESR spectra originating from the HF interaction with the ¹⁴N nucleus seem to attribute this triplet center to the N-V_Si defect.

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