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Radiation effects in Si--Ge quantum size structures (review)
Sobolev N.A.1
1Departamento de Fisica & I3N, Universidade de Aveiro,-193 Aveiro, Portugal
Поступила в редакцию: 17 июля 2012 г.
Выставление онлайн: 20 января 2013 г.
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The article is dedicated to the review and analysis of the effects and processes occurring in Si-Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.
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