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Growth of GaAs1-xBix layers by molecular-beam epitaxy
Semyagin B. R.
1, Kolesnikov A. V.
1, Putyato M. A.
1, Preobrazhenskii V. V.
1, Popova T. B.2, Ushanov V. I.2, Chaldyshev V. V.
2
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Ioffe Institute, St. Petersburg, Russia
2Ioffe Institute, St. Petersburg, Russia
Email: sbr@isp.nsc.ru, kolesn@isp.nsc.ru, puma@isp.nsc.ru, pvv@isp.nsc.ru, ushanovvi@mail.ioffe.ru, chald.gvg@mail.ioffe.ru
By molecular-beam epitaxy we have grown epitaxial layers of GaAs1-xBix solid solutions with a bismuth content of 0<x<0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers. Keywords: gallium arsenide, bismuth, molecular-beam epitaxy, bandgap.
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