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Semiconductors, 2023, volume 57, issue 1
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
Bessolov V. N., Konenkova E. V. , Rodin S. N.
Initial stages of growth of the GaN(11\=22) layer on a nano-structured Si(113) substrate
3
Basalaev Yu.M., Duginova E. B., Basalaeva O. G.
Ab initio study of electronic, vibrational and elastic properties of LiInTe2 and LiTlTe2 crystals
7
Electronic Properties of Semiconductors
Borzdov V. M., Borzdov A. V., Vasileuski Y. G.
Definition of electron polar scattering angle on ionized impurities for Monte Carlo simulation of charge carrier transport in semiconductors
14
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Pashkovskii A.B., Bogdanov S.A., Bakarov A. K. , Zhuravlev R.S. , Lapin V.G., Lukashin V.M. , Karpov S.N., Rogachev I.A. , Tereshkin E.V.
Electrons drift velocity overshot in heterostructures with double-sided donor-acceptor doping and digital barriers
20
Carbon Systems
Andronov A. A., Pozdniakova V. I.
On THz cyclotron resonance continuous wave lasers in graphene in crossed E,H fields at T=300 K
27
Physics of Semiconductor Devices
Sorokina S.V., . Soldatenkov F. Yu., Potapovich N. S., Khvostikov V.P.
Front contact to the GaSb-photovoltaic converter: Properties and thermal stability
33
Zakgeim A. L., Karandashev S. A., Klimov A. A., Kunkov R. E., Lukhmyrina T. S., Matveev B. A., Remennyi M. A., Usikova A. A., Chernyakov A. E.
On heating mechanisms in LEDs based on p-InAsSbP/n-InAs(Sb)
39
Lebedev A. A., Kozlovski V. V. , Levinshtein M. E. , Malevsky D. A., Oganesyan G. A.
Effect of proton irradiation on the properties of high-voltage integrated 4H-SiC Schottky diodes at operating temperatures
49
Tokarev A. S., Lapshina O.A., Kozyrev A.A.
Influence of ion cleaning of front facet of 9xx nm InGaAs/AlGaAs/GaAs diode lasers on their maximal output power
54
Babichev A.V., Komarov S.D., Tkach Yu.S., Nevedomskiy V.N., Blokhin S.A., Kryzhanovskaya N.V., Gladyshev A.G., Karachinsky L.Ya., Novikov I.I.
Investigation of photoluminescence in the InGaAs/GaAs system with 1100-nm range quantum dots
58
Snigirev L. A. , Ushanov V. I. , Ivanov A. A. , Bert N. A. , Kirilenko D. A., Yagovkina M. A. , Preobrazhenskii V. V., Putyato M. A. , Semyagin B. R. , Kasatkin I. A., Chaldyshev V. V.
Structure and optical properties of a composite AsSb-Al0.6Ga0.4As0.97Sb0.03 metamaterial
65
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