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The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates
Effect of the pump power on the photoluminescence intensity for dislocation-related luminescence centers is studied in p-type silicon containing oxygen precipitates. Oxygen precipitates are induced as a result of three-stage annealing used for formation of a getter for fast diffusing impurities in microelectronics technology while D1 and D2 dislocation-related luminescence centers were produced during subsequent annealing in a flow of argon at 1000oC. The photoluminescence excitation efficiencies for the D1 and D2 lines were measured at a temperature of liquid helium. Keywords: dislocation-related luminescence, silicon, oxygen precipitates, photoluminescence excitation efficiency.
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