Bolotov V. V. 1, Knyazev E. V. 1, Ponomareva I. V. 1, Ivlev K. E. 1
1Omsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Omsk, Russia
Email: knyazev@obisp.oscsbras.ru.
The work is devoted to the creation of a sensor structure based on a porous silicon membrane. The structure under study integrates a porous layer used as a gas transport layer and a gas sensitive layer of non-stoichiometric tin oxide. The paper investigates the morphology of the structure and shows the gas permeability of the membrane on porous silicon. The gas sensitivity of the test structure obtained by passing a gas-air mixture containing NO2 has been studied. Keywords: porous silicon, membrane, non-stoichiometric tin oxide, thin films, resistive gas sensor.
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Дата начала обработки статистических данных - 27 января 2016 г.