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On the Formation of Low-Resistivity Contacts for 4H-SiC Bipolar Devices
Afanasev A. V.1, Ilyin V. A. 1, Luchinin V. V. 1, Serkov A. V. 1, Chigirev D. A. 1
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: a_afanasjev@mail.ru
The results of studies on the development of technological methods for the formation of low-resistivity contact systems to n- and p-SiC based on single and multilayer Ni-, Al- and Ti-compositions for 4H-SiC based bipolar devices are presented. It is shown that the formation of low-resistivity contacts based on Ni to n-4H-SiC (rhoc=3.6·10-4 Ohm·cm2) and Ni/Al to p-4H-SiC (rhoc=5.9·10-5 Ohm·cm2) is possible within a single cycle of vacuum annealing at 1000oC for 120 s. This technological solution makes it possible to reduce the number of high-temperature processes. Keywords: 4H-SiC, n-type, p-type, ohmic contacts, RTA, TLM, specific contact resistivity.
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