Aleshkin V. Ya.1, Dubinov A. A.1, Gavrilenko V. I.1, Pavlov S. G.2, H.-W.Hübers H. -W.2,3
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Institute of Optical Sensor Systems, German Aerospace Center (DLR), Berlin, Germany
3Institut für Physik, Humboldt-Universität zu Berlin, Berlin, Germany
Email: aleshkin@ipmras.ru
Three recombination mechanisms of nonequilibrium carriers in gapless undoped quantum well in HgTe/CdHgTe heterostructure are considered. Dependencies of ensemble-average probability of recombination (inverse of recombination time) on concentration of nonequilibrium carriers for recombination with emission of optical phonons, recombination with emission of two-dimensional plasmons, and radiative recombination have been calculated. Key words: gapless HgTe quantum well, recombination mechanisms of nonequilibrium carriers.
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Дата начала обработки статистических данных - 27 января 2016 г.