Semiconductors
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Thermoelectric Properties of Ag8Ge1-xMnxTe6 Solid Solutions
Rahimov R. N.
1, Qahramanova A. S.
1, Arasly D. H.
1, Khalilova A. A.
1, Mammadov I. Kh.
2, Khalilzade A. R.
3
1Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
2Azerbaijan State Aviation Academy, Baku, Azerbaijan
3University of Waterloo, Waterloo, Canada
2Azerbaijan State Aviation Academy, Baku, Azerbaijan
3University of Waterloo, Waterloo, Canada
Email: rashad@physics.sciences.az, qahramanova2013@mail.ru, durdana@physics.science.az, almaz@physics.science.az, imamaedov10@mail.ru, anar.khalilzade@gmail.com
Ag8Ge1-xMnxTe6 solid solutions with different manganese content (x=0, 0.05, 0.1, 0.2) were prepared by alloying and further pressing the powders under a pressure of 0.6 GPa. By the X-ray diffraction studies have shown that the introduction of manganese atoms leads to the compressibility of the Ag8GeTe6 lattice. All p-type samples had high resistance below the transition at temperatures of 180-220 K. An increase in electrical conductivity in the range of 220-300 K was analyzed using the Mott ratio; at temperatures T>320 K, semiconductor behavior is observed in all compositions. The highest thermoelectric figure of merit ZT=0.7 at 550 K was obtained for a solid solution of the composition Ag8Ge1-xMnxTe6 (x=0.05). Keywords: solid solution, Ag8Ge1-xMnxTe6, thermoelectric efficiency, amorphization, low thermal conductivity
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