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Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates
Silicon light-emitting diodes with dislocation-related electroluminescence have been studied at room temperature. For the fabrication of the light-emitting diode structures, a well-known method for the formation of dislocation-related luminescence centers during anneals of silicon with a high oxygen concentration in a flow of argon was modified by introducing a preliminary O+ ion implantation and carrying out a final anneal in a chlorine-containing atmosphere. In the electroluminescence spectra, the D1 dislocation-related luminescence line dominates at currents less than <150 mA and the near-band-edge luminescence line starts to dominate with increasing current. The electroluminescence excitation efficiency for the D1 center is 3.3·10-20 cm2·s at room temperature. Keywords:: Light-emitting diodes, dislocation-related luminescence, silicon, oxygen precipitates.
- N.A. Drozdov, A.A. Patrin, V.D. Tkachev. JETP Lett., 23, 597 (1976)
- N.A. Sobolev. Semiconductors, 44 (1), 1 (2010)
- Luelue Xiang, Dongsheng Li, Lu Jin, Shuming Wang, Deren Yang. J. Appl. Phys., 113, 033518 (2013)
- V.V. Kveder, E.A. Steinman, S.A. Shevchenko, H.G. Grimmeiss. Phys. Rev. B, 51, 10520 (1995)
- E.O. Sveinbjornsson, J. Weber. Appl. Phys. Lett., 69, 2686 (1996)
- V. Kveder, V. Badylevich, E. Steinman, A. Izotov, M. Zeibt, W. Schreter. Appl. Phys. Lett., 84, 2106 (2004)
- N.A. Sobolev, A.M. Emel'yanov, V.V. Zabrodskii, N.V. Zabrodskaya, V.L. Sukhanov, E.I. Shek. Semiconductors, 41, 616 (2007)
- H.A. Sobolev, A.E. Kalyadin, M.V. Konovalov, P.N. Aruev, V.V. Zabrodskiy, E.I. Shek, K.F. Shtel'makh, A.N. Mikhaylov, D.I. Tetel'baum. Semiconductors, 50 (2), 240 (2016)
- N.A. Sobolev, A.E. Kalyadin, E.I. Shek, K.F. Shtel'makh, A.K. Gutakovskii, V.I. Vdovin, A.N. Mikhaylov, D.I. Tetel'baum, D. Li, D. Yang, L.I. Fedina. Mater. Today Proc., 5-6, 14772 (2016)
- S. Binetti, S. Pizzini, E. Leoni, R. Somaschini, A. Castaldini, A. Cavallini. J. Appl. Phys., 92, 2437 (2002)
- S. Pizzini, E. Leonti, S. Binetti, M. Acciarri, A. Le Donne, B. Pichaud. Sol. St. Phenomena, 95-96, 273 (2004)
- K. Bothe, R.J. Falster, J.D. Murphy. Appl. Phys. Lett., 101, 032107 (2012)
- V.I. Vdovin, L.I. Fedina, A.K. Gutakovskii, A.E. Kalyadin, E.I. Shek, K.F. Shtel'makh, N.A. Sobolev. Crystallogr. Rep., 66 (4), 625 (2021)
- N.A. Sobolev, A.E. Kalyadin, K.F. Shtel'makh, E.I. Shek. Semiconductors, 55 (12), 891 (2021)
- M. Brehm, M. Grydlik. Nanotechnology, 28, 392001 (2017)
- V.A. Zinovyeva, A.F. Zinovieva, Zh.V. Smagina, A.V. Dvurechenskii, V.I. Vdovin, A.K. Gutakovskii, L.I. Fedina, O.M. Borodavchenko, V.D. Zhivulko, A.V. Mudryi. J. Appl. Phys., 130, 153101 (2021)
- J.F. Ziegler, M.D. Ziegler, J.P. Biersack. Nucl. Instr. Meth. B, 268, 1818 (2010)
- http://www.srim.org
- S.M. Sze. Physics of Semiconductor Devices (Wiley-Interscience, 1969)
- S. Coffa, G. Franzo, F. Priolo. Appl. Phys. Lett., 69, 2077 (1996)
- N.A. Sobolev. Physica B, 308-310, 333 (2001)
- N.A. Sobolev, A.M. Emel'yanov, R.N. Kyutt, Yu.A. Nikolaev. Sol. St. Phenomena, 69-70, 371 (1999)
- T. Trupke, M.A. Green, P. Wurfel, P.P. Altermatt, A. Wang, J. Zhao, R. Corkish. J. Appl. Phys., 94, 4930 (2003)
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