Physics of the Solid State
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Josephson tunnel junctions with integral SIN shunting.
This work is devoted to the study of tunnel Josephson superconductor-insulator-superconductor (SIS) junctions with a new type of shunting based on the usage of an additional superconductor-insulator-normal metal (NIS) junction located around the SIS junction. Numerical calculations of the parameters of such shunted junctions were carried out and modeling of their IVC (current-voltage characteristics) was performed. The designed samples were manufactured, their parameters were studied. To investigate the behavior of junctions under the influence of high-frequency signals in the sub-THz range, their IVCs were measured. Keywords: Superconducting devices, superconductor-insulator-superconductor tunnel junction, Josephson effect, shunting of Josephson junctions.
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