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Percolation effect impact on resistive switching of structures based on nanocomposite (Co40Fe40B20)x(LiNbO3)100-x
Russian version
DOI: 10.21883/PSS.2022.11.54188.410
Nikiruy K.E.1, Emelyanov A.V. 1,2, Matsukatova A.N. 1, Kukueva E.V.1, Vasiliev A.L.1, Sitnikov A.V.1,3, Demin V.A.1, Rylkov V.V. 1,4
1National Research Center “Kurchatov Institute”, Moscow, Russia
2
3Voronezh State Technical University, Voronezh, Russia
4Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
Email: emelyanov.andrey@mail.ru, an.matcukatova@physics.msu.ru, vvrylkov@mail.ru
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Comparative studies of resistive switching (RS) effect of metal/nanocomposite/metal (M/NC/M), metal/nanocomposite/LiNbO3/metal (M/NC/LNO/M) structures based on NC (Co40Fe40B20)x(LiNbO3)100-x (x=6-20 at.%) with CoFe nanogranules 2-4 nm in size, as well as structures without a NC layer (M/LNO/M), have been carried out. It was found that the percolation conductivity in NC and presence of a thin LNO layer play a key role in the RS effect. When the metal content approaches the percolation threshold of M/NC/M structures (xp~10 at.%), low-resistance percolation nanochannels of granules are formed in structures with an embedded LNO layer, which ensure their stable RS, which, however, are noticeably suppressed as x decreases relative to xp by Delta x~1-2 at.%. Keywords: resistive switching, memristor, nanocomposite, percolation.
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