Diamond-carbide-silicon composite "skeleton" as a promising material for X-ray optical substrates
Zorina M.V.1, Mikhailenko M.S.1, Pestov A.E.1, Toropov M.N.1, Chernyshev A.K.1, Chkhalo N.I.1, Gordeev S.K.2, Vitkin V.V.3
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2CSRI of materials, St Petersburg, Russia
3ITMO University, St. Petersburg, Russia
Email: aepestov@ipm.sci-nnov.ru

PDF
The paper proposes the use of diamond-carbide-silicon composite "Skeleton"oledR coated with amorphous silicon as substrates for multilayer X-ray mirrors for powerful synchrotron radiation sources (3+ and 4th generation). The surfaces with the following parameters were obtained using standard deep polishing methods: flatness at the level of RMS90%=54.2 nm; effective roughness sigmaeff~1.0 nm; high-frequency roughness sigma2x2~0.1 nm. Keywords: x-ray optics, x-ray mirrors, substrates for x-ray mirrors, roughness.
  1. [Electronic resource] Available at: http://www.esrf.eu/Apache_files/Upgrade/ESRF-orange-book.pdf
  2. [Electronic resource] Available at: https://www.maxiv.lu.se/about-us/
  3. S.V. Rashchenko, M.A. Skamarokha, G.N. Baranov, Ya.V. Zubavichus, I.V. Rakshun. AIP Conf. Proc., 2299, 060001 (2020). DOI: 10.1063/5.0030346
  4. A.R. Belurea, A.K. Biswas, D. Raghunathan, Rishipal, S. Bhartiya, R. Singh, S.K. Rai, R.S. Pawade, M.P. Kamath, N.S. Benerji. Mater. Today: Proceed., 26, 2260 (2020). DOI: 10.1016/j.matpr.2020.02.490
  5. L. Assoufid, H. Graafsma. MRS Bull., 42 (6), 418 (2017). DOI: 10.1557/mrs.2017.118
  6. Z. Wang, L. Wu, Y. Fang, A. Dun, J. Zhao, X. Xu, X. Zhu. Micromachines, 13 (2), 318 (2022). DOI: 10.3390/mi13020318
  7. P.Z. Takacs. Synchrotron Radiat. News., 2 (26), 24 (1989). DOI: 10.1080/08940888908261239
  8. N.I. Chkhalo, M.V. Zorina, I.V. Malyshev, A.E. Pestov, V.N. Polkovnikov, N.N. Salashchenko, D.S. Kazakov, A.V. Mil'kov, I.L. Strulya. Tech. Phys., 64 (11), 1596 (2019). DOI: 10.1134/S1063784219110070
  9. D. Zhu, Y. Feng, S. Stoupin, S.A. Terentyev, H.T. Lemke, D.M. Fritz, M. Chollet, J.M. Glownia, R. Alonso-Mori, M. Sikorski, S. Song, T.B. van Driel, G.J. Williams, M. Messerschmidt, S. Boutet, V.D. Blank, Yu.V. Shvyd'ko, A. Robert. Rev. Sci. Instrum., 85 (6), 063106 (2014). DOI: 10.1063/1.4880724
  10. K. Li, Y. Liu, M. Seaberg, M. Chollet, T.M. Weiss, A. Sakdinawat. Opt. Express., 28 (8), 10939 (2020)
  11. M. Polikarpov, V. Polikarpov, I. Snigireva, A. Snigirev. Phys. Proced., 84, 213 (2016). DOI: 10.1016/j.phpro.2016.11.037
  12. [Electronic resource] Available at: http://siliconwafers.net/
  13. N. Khatri, R. Sharma, V. Mishra, H. Garg, V. Karar. Adv. Mater. Proc., 2 (7), 425 (2017). DOI: 10.5185/amp.2017/704
  14. L.N. Abdulkadir, K. Abou-El-Hossein, A.I. Jumare, P.B. Odedeyi, M.M. Liman, T.A. Olaniyan. Int. J. Adv. Manuf. Technol., 96, 173 (2018). DOI: 10.1007/s00170-017-1529-x
  15. A. Mir, X. Luo, K. Cheng, A. Cox. Int. J. Adv. Manuf. Technol., 94, 2343 (2018). DOI: 10.1007/s00170-017-1021-7
  16. C. Kataev, V. Sidorov, S. Gordeev. Elektronika: NTB, 3, 60 (2011) (in Russian)
  17. L. Peverini, E. Ziegler, T. Bigault, I. Kozhevnikov. Phys. Rev. B, 72, 045445 (2005)
  18. M.N. Toropov, A.A. Akhsakhalyan, M.V. Zorina, N.N. Salashchenko, N.I. Chkhalo, Yu.M. Tokunov. Tech. Phys., 65 (11), 1873 (2020). DOI: 10.1134/S1063784220110262
  19. I.G. Zabrodin, M.V. Zorina, I.A. Kas'kov, I.V. Malyshev, M.S. Mikhailenko, A.E. Pestov, N.N. Salashchenko, A.K. Chernyshev, N.I. Chkhalo. Tech. Phys., 65 (11), 1837 (2020). DOI: 10.1134/S1063784220110274

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru