A.E. Pestov 1, M.S. Mikhailenko 1, A.K. Chernyshev 1, M.V. Zorina 1, N.I. Chkhalo 1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: mikhaylenko@ipmras.ru
The paper demonstrates the pulse mechanism of physical sputtering taking into account the evolution of the surface. The model is based on pulsed energy transfer in collision cascades. The main feature is the consideration of surface roughness. The results of numerical simulation qualitatively coincide with those observed in experiments. It is shown that the angular dependences calculated in the framework of this model have closer values of the sputtering yields to the experimental ones than those calculated in TRIM. Keywords: ion etching, numerical simulation, roughness, Monte Carlo.
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Дата начала обработки статистических данных - 27 января 2016 г.