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The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film
Russian version
DOI: 10.21883/PSS.2022.13.54696.161
Afanasiev M. S.1, Belorusov D.A.1, Kiselev D. A.1,2, Sivov A. A.1, Chucheva G. V.1
1Fryazino Branch, Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
2National University of Science and Technology MISiS, Moscow, Russia
Email: gvc@ms.ire.mssi.ru
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Films of the composition Ba0.8Sr0.2TiO3 (BST) were synthesized by the method of high-frequency (HF) sputtering on the buffer layer of a ferroelectric film of the composition PbZrxTi1-xO3 (PZT). Comparative results of electrophysical properties of three different metal-dielectric-metal (MDM)-structures are presented: Pt/BST/Ni, Pt/PZT/Ni, and Pt/PZT-BST/Ni. Keywords: metal-dielectric-metal structures, ferroelectric films of composition Ba0.8Sr0.2TiO3, a buffer layer, electrophysical properties.
  1. B. Piekarski, M. Dubey, D. De Voe, E. Zakar, R. Zeto, J. Conrad, R. Piekarz, M. Ervin. Integrated Ferroelectrics 24, 147 (1999)
  2. E. Zakar, M. Dubey, B. Piekarski, J. Conrad, R. Piekarz, R.J. Widuta. Vac. Sci. Technol. 19, 1, 345 (2001)
  3. S. Gevorgian. Ferroelectrics in Microwave Devices. Circuits and Systems. Springer, N. Y. (2009). 365 p
  4. N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N.Y. Park, G.B. Stephenson, I. Stolitchnov, A.K. Taganstev, D.V. Taylor, T. Yamada, S. Streiffer. J. Appl. Phys. 100, 051606 (2006)
  5. F.-C. Sun, M.T. Kesim, Y. Espinal, S.P. Alpay. J. Mater. Sci. 51, 499 (2016)
  6. L.W. Martin, A.M. Rappe. Nature Rev. Mater. 2, 16087 (2017)
  7. C.L. Chen, J. Shen, S.Y. Chen, G.P. Luo, C.W. Chu, F.A. Miranda, F.W. Van Keuls, J.C. Jiang, E.I. Meletis, H.Y. Chang. Appl. Phys. Lett. 78, 652 (2001)
  8. T. Kawakubo, S. Komatsu, K. Abe, K. Sano, N. Yanase, N. Fukushima. Jpn. J. Appl. Phys. 37, 5108 (1998)
  9. J. Vukmirovic, A. Nesterovic, I. Stijepovic, M. Milanovic, N. Omerovic, B. Bajac, J. Bobic, V.V. Srdic. J. Mater. Sci. Mater. Electron. 30, 14995 (2019)
  10. X.Y. Chen, Z.P. Xu, D.X. Yan, Y.S. Fan, J.G. Zhu, P. Yu. J. Alloys Compd. 695, 1913 (2017).
  11. P. Gardes, M. Diatta, M. Proust, E. Bouyssou, P. Poveda. J. Appl. Phys. 129, 214101 (2021)
  12. S.P. Zinchenko, D.V. Stryukov, A.V. Pavlenko, V.M. Mukhortov. ZhTF (in Russian) 46, 41 (2020)
  13. C.-S. Park, S.-M. Lee, H.-E. Kim. J. Am. Cer. Soc. 90, 9, 2923 (2008)
  14. M. Layns, A. Glass. Segnetoelektriki i rodstvennye materialy (in Russian) / Edited by V.V. Lemanov, G.A. Smolensky. Mir, M. (1981). 736 p
  15. B.A. Tuttle, R.W. Schwartz. MRS Bull. 21, 6, 49 (1996)
  16. M.S. Afanas'ev, D.A. Kiselev, S.A. Levashov, V.A. Luzanov, A. Nabiev, V.G. Naryshkina, A.A. Sivov, G.V. Chucheva. FTT (in Russian) 60, 5, 951 (2018)
  17. E.I. Gol'dman, A.G. Zhdan, G.V. Chucheva. PTE (in Russian) 6, 110 (1997).

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