Volumes and Issues
Home » Optics and Spectroscopy » Year 2022, issue 8 » Article p. 941
<<<>>>
Formation of In2O3 films by magnetron sputtering on Al2O3 (012) substrates
Russian version
DOI: 10.21883/EOS.2022.08.54766.3483-22
Tikhii A. A.1, Nikolaenko Yu. M.2, Svyrydova K.A.2,3, Zhikharev I. V.2
1Lugansk State Pedagogical University, Lugansk, Luhansk People's Republic
2Donetsk Institute for Physics and Engineering named after A.A. Galkin, Donetsk People's Republic
3Donbas National Academy of Civil Engineering and Architecture, Makeevka, Donetsk People's Republic
Email: ea0000ffff@mail.ru, nik@donfti.ru, kasv@i.ua, izhikharev@mail.ru
PDF
The results of studies of the microstructure and optical characteristics of In2O3 films deposited by the dc-magnetron sputtering of a polycrystalline target onto single-crystal sapphire substrates are summarized. The technological regimes of films preparation differed in the deposition time, substrate temperature, and the presence of additional heat treatment of film structures in air. It has been established that the optical refractive index of films deposited on a "cold" substrate increases in the direction from the substrate to the external interface. Heat treatment of the films eliminates the inhomogeneity of the refractive index and leads to a decrease in the band gap. The observed optical properties are explained by the thickness inhomogeneous microstructure of the films, which is formed during sputtering of a target with a relatively low mechanical strength. Keywords: In2O3 films, magnetron sputtering, Al2O3 substrates, refraction index, bandgap width.
  1. A.A. Khalefa, J.M. Marei, H.A. Radwan, J.M. Rzaij. Digest J. Nanomaterials and Biostructures, 16 (1), 197 (2021)
  2. A.A. Yousif, M.H. Hasan. J. Biosens. Bioelectron., 6 (4), 1000192 (2015). DOI:10.4172/2155-6210.1000192
  3. J. Liu, W. Guo, F. Qu, C. Feng, C. Li, L. Zhu, J. Zhou, S. Ruan, W. Chen. Ceramics International, 40, 6685 (2014). DOI: /10.1016/j.ceramint.2013.11.129
  4. D. Manno,M.D. Giulio, T. Siciliano, E. Filippo, A. Serra. J. Phys. D: Appl. Phys., 34, 2097 (2001). DOI: 10.1088/0022-3727/34/14/303
  5. Yu.M. Nikolaenko, A.N. Artemov, Yu.B. Medvedev, N.B. Efros, I.V. Zhikharev, I.Yu. Reshidova, A.A. Tikhii, S.V. Kara-Murza. J. Phys. D: Appl. Phys., 49, 375302 (2016). DOI: 10.1088/0022-3727/49/37/375302
  6. X. Du, J. Yu, X. Xiu, Q. Sun, W. Tang, B. Man. Vacuum, 167, 1 (2019). DOI: 10.1016/j.vacuum.2019.05.035
  7. S.K. Yadav, S. Das, N. Prasad, B.K. Barick, S. Arora, D.S. Sutar, S. Dhar. J. Vacuum Science \& Technology A, 38, 033414 (2020). DOI: 0.1116/6.0000038
  8. M. Nistor, W. Seiler, C. Hebert, E. Matei, J. Perri\`ere. Appl. Surface Science, 307,455 (2014). DOI: 10.1016/j.apsusc.2014.04.056
  9. W. Seiler, M. Nistor, C. Hebert, J. Perri\`ere. Solar Energy Materials and Solar Cells, 116, 34 (2013). DOI: 10.1016/j.solmat.2013.04.002
  10. S. Kaneko, H. Torii, M. Soga, K. Akiyama, M. Iwaya, M. Yoshimoto, T. Amazawa. Jpn. J. Appl. Phys., 51 (1S), 01AC02 (2012)
  11. M.Z. Jarzebski. Phys. Stat. Sol. (a), 71, 13 (1982). DOI:10.1002/pssa.2210710102
  12. M. Higuchi, S. Uekusa, R. Nakano, K. Yokogawa. J. Appl. Phys., 74 (11), 6710 (1993). DOI: 10.1063/1.355093
  13. Y. Shigesato, S. Takaki, T. Haranoh. J. Appl. Phys., 71 (7), 3356 (1992). DOI: 10.1063/1.350931
  14. H. Kim, C.M. Gilmore, A. Pique, J.S. Horwitz, H. Mattoussi, H. Murata, Z.H. Kafafi, D.B. Chrisey. J. Appl. Phys., 86 (11), 6451 (1999). DOI: 10.1063/1.371708
  15. Yu.M. Nikolaenko, A.B. Mukhin, V.A. Chaika, V.V. Burkhovetskii. Technical Physics, 55 (8), 1189 (2010)
  16. A.A. Tikhii, Yu.M. Nikolaenko, A.S. Kornievets, I.V. Zhikharev. In: The 21st International Conference on Surface Modification of Materials by Ion Beams, ed. by M. Yuzhakov, O. Lapteva, M. Slobodyan, V. Tarbokov, G. Remnev (Mozart, Tomsk, Russia, 2019), p. 4
  17. A.A. Tikhii, Yu.M. Nikolaenko, Yu.I. Zhikhareva, I.V. Zhikharev. In: 7th International Congress on Energy Fluxes and Radiation Effects (EFRE-2020 online): Abstracts (Publishing House of IAO SB RAS, Tomsk, 2020), p. 601
  18. A.A. Tikhii, Yu.M. Nikolaenko, Yu.I. Zhikhareva, I.V. Zhikharev. Opt. Spectrosc., 128 (10), 1667 (2020). DOI: 10.1134/S0030400X20100252
  19. A.A. Tikhii, Yu.M. Nikolaenko, Yu.I. Zhikhareva, A.S. Kornievets, I.V. Zhikharev. Semiconductors, 52, 320 (2018). DOI: 10.1134/S1063782618030223
  20. V.A. Gritskikh, I.V. Zhikharev, S.V. Kara-Murza, N.V. Korchikova, T.V. Krasnyakova, Y.M. Nikolaenko, A.A. Tikhii, A.V. Pavlenko, Y.I. Yurasov. In: Advanced Materials Techniques, Physics, Mechanics and Applications, ed. by Ivan A. Parinov, Shun-Hsyung Chang, Muaffaq A. Jani. Springer Proceedings in Physics (Springer International Publishing AG., 2017), v. 193, p. 55. DOI: 10.1007/978-3-319-56062-5
  21. A.A. Tikhii, V.A. Gritskikh, S.V. Kara-Murza, N.V. Korchikova, Yu.M. Nikolaenko, Yu.I. Zhikhareva, I.V. Zhikharev. In: European Materials Research Society Spring Meeting 2016 (E-MRS 2016) (France, Lille, 2016), L.P. 32 --- Access mode: https://www.european-mrs.com/2016-spring-symposium-l- european-materials-research-society
  22. A.A. Tikhii, Yu.M. Nikolayenko, M.Yu. Badekin, V.N. Sayapin, N.P. Ivanitsyn, I.V. Zhikharev. Vestnik DonNU. Ser. A: Natural Sciences, 3, 112 (2017)
  23. A.A. Tikhii, V.A. Gritskikh, S.V. Kara-Murza, N.V. Korchikova, Y.M. Nikolayenko, I.V. Zhikharev. In the collection: International Scientific-Practical Conference "Open Physics Readings". Theses of Reports, ed. by T.V. Krasnyakova, E.E. Gorbenko, L.A. Reznichenko, I.A. Verbenko ("Alma Mater", Luhansk, 2016), p. 37
  24. A.A. Tikhii, Yu.I. Zhikhareva, I.V. Zhikharev. In the collection: Physics.SPb: Abstracts of the International Conference 18-22 October 2021 (Polytech-press, SPb., 2021), p. 252
  25. A.A. Tikhii, K.A. Svyrydova, Yu.I. Zhikhareva, I.V. Zhikharev. J. Appl. Spectrosc., 88 (5), 975 (2021). DOI: 10.1103/PhysRevLett.29.274
  26. A. Walsh, J.L.F. Da Silva, Su-Huai Wei, C. Korber, A. Klein, L.F.J. Piper, A. De Masi, K.E. Smith, G. Panaccione, P. Torelli, D.J. Payne, A. Bourlange, R.G. Egdell. Phys. Rev. Lett., 100, 167402 (2008). DOI: 10.1103/PhysRevLett.100.167402
  27. Y. Furubayashi, M. Maehara, T. Yamamoto. ACS Applied Electronic Materials, 1 (8), 1545 (2019). DOI: 10.1021/acsaelm.9b00317
  28. L. Gupta, A. Mansingh, P.K. Srivastava. Thin Solid Films, 176, 33 (1989). DOI: 10.1016/0040-6090(89)90361-1
  29. A. Schleife, M.D. Neumann, N. Esser, Z. Galazka, A. Gottwald, J. Nixdorf, R. Goldhahn, M. Feneberg. New J. Phys., 20, 053016 (2018). DOI: 10.1088/1367-2630/aabeb0
  30. N.M. Ravindra, P. Ganapathy, J. Choi. Infrared Physics \& Technology, 50, 21 (2007). DOI: 10.1016/j.infrared.2006.04.001

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru