On-chip ATR sensor (λ = 3.4 μm) based on InAsSbP/InAs double heterostructure for the determination of ethanol concentration in aqueous solutions
Karandashev S. A.
1, Klimov A. A.
1, Lukhmyrina T. S.
1, Matveev B. A.
1, Remennyi M. A.
1, Usikova A. A.
11Ioffe Institute, St. Petersburg, Russia
Email: ksa08@yandex.ru, a.klimov@mail.ioffe.ru, t.lukhmyrina@ioffe.mail.ru, bmat@iropt3.ioffe.ru, Mremennyy@mail.ioffe.ru
We discuss photoelectrical properties of an on-chip attenuated total reflection (ATR) sensor for the ethanol concentration measurements in an aqueous solution. The on-chip sensor/microchip was made from a p-InAsSbP/n-InAs monolithic double heterostructure with three mesas/individual diodes grown on a single n+-InAs substrate/waveguide. Two heterostructure diodes were used as photodiodes, while the third one - as a LED. The ethanol concentration was measured via an algorithm based on analysis of the I-V characteristic parameters of a photodiode and the L-I characteristics of the LED. Keywords: photodiodes in the mid-IR range, LEDs in the mid-IR range, on-chip sensor, optical sensors, ATR sensor.
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