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Templates for homoepitaxial growth of 3C-SiC obtained by direct bonding of silicon carbide wafers of differing polytype
Mynbaeva M. G.
1, Amelchuk D. G.
1, Smirnov A. N.
1, Nikitina I. P.1, Lebedev S. P.
1, Davydov V. Yu.
1, Lebedev A. A.
1
1Ioffe Institute, St. Petersburg, Russia
Email: mgm@mail.ioffe.ru, amelchuk.dmitriy@mail.ioffe.ru, alex.smirnov@mail.ioffe.ru, irina.nikitina45@gmail.com, lebedev.sergey@mail.ioffe.ru, valery.davydov@mail.ioffe.ru, shura.lebe@mail.ioffe.ru
An approach of direct bonding of SiC wafers of differing polytypes has been implemented in order to create a template for cubic 3C-SiC homoepitaxy. Heteroepitaxial 3C-SiC layers grown by chemical vapor deposition were transferred onto a hexagonal 6H-SiC wafer. The results of structural characterization showed that the quality of 3C-SiC sublimation epitaxy on the templates is comparable to the level of epitaxy of cubic silicon carbide by chemical vapor deposition method. It was confirmed that the 3C-SiC layer transferred onto the 6H-SiC substrate plays the role of a crystalline "seed" that determines cubic polytype of the overgrown SiC layer. Keywords: Silicon carbide, polytypes, direct bonding, templates, sublimation epitaxy.
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