Optics and Spectroscopy
To authors
X-ray Luminescent Properties of Zinc Oxide Films on the Sapphire M and A-Plane
Venevtsev I. D.
1, Muslimov A. E.2, Tarasov A. P.
2,3, Emiraslanova L. L.4, Ismailov A. M.4, Kanevsky V. M.2
1Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
2Shubnikov Institute of Crystallography “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, Russia
3M.F. Vladimirsky Moscow Regional Research and Clinical Institute (MONIKI), Moscow, Russia
4Dagestan State University, Makhachkala, Dagestan Republic, Russia
2Shubnikov Institute of Crystallography “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, Russia
3M.F. Vladimirsky Moscow Regional Research and Clinical Institute (MONIKI), Moscow, Russia
4Dagestan State University, Makhachkala, Dagestan Republic, Russia
Email: Venevtsev.Ivan@gmail.com
The results of comparative studies of the processes of high-temperature synthesis, luminescence and scintillation characteristics of ZnO films on M(100)- and A(110)-orientation sapphire substrates are presented. It is shown that the use of the magnetron deposition method makes it possible to form, against the background of a continuous film, ensembles of individual [001] ZnO microcrystals with pronounced X-ray luminescent properties. The X-ray luminescence kinetics is characterized by two components: a fast component with a decay time in the order of a nanosecond and a slow luminescence component. The study of the films by photoluminescence spectroscopy revealed the features of the near-band-edge luminescence spectra of the samples, in particular, the presence of various excitonic emission channels. Differences in the spectral parameters of the near-band-edge luminescence band in the case of optical and X-ray excitation are found and interpreted. Keywords: Films, microcrystals, zinc oxide, X-ray luminescence, photoluminescence, excitonic emission.
- B.H. Lin, H.Y. Chen, S.C. Tseng, J.X. Wu, B.Y. Chen, C.Y. Lee, G.C. Yin, S.H. Chang, M.T. Tang, W.F. Hsieh. Appl. Phys. Lett., 109, 192104 (2016). DOI: 10.1063/1.4967743
- B.H. Lin, X.Y. Li, D.J. Lin, B.L. Jian, H.C. Hsu, H.Y. Chen, S.C. Tseng, C.Y. Lee, B.Y. Chen, G.C. Yin, M.Y. Hsu, S.H. Chang, M.T. Tang, W.F. Hsieh. Sci. Rep., 9, 207 (2019). DOI: 10.1038/s41598-018-36764-8
- M.R. Wagner, G. Callsen, J.S. Reparaz, J.H. Schulze, R. Kirste, M. Cobet, I.A. Ostapenko, S. Rodt, C. Nenstiel, M. Kaiser, A. Hoffmann, A.V. Rodina, M.R. Phillips, S. Lautenschlager, S. Eisermann, B.K. Meyer. Phys. Rev. B, 84, 035313 (2011). DOI: 10.1103/PhysRevB.84.035313
- P.A. Rodnyi, K.A. Chernenko, I.D. Venevtsev. Opt. Spectrosc., 125, 372 (2018). DOI: 10.1134/S0030400X18090205
- K. Oka, H. Shibata, S. Kashiwaya. J. Cryst. Growth., 237 (1), 509 (2002). DOI: 10.1016/S0022-0248(01)01953-4
- F. Huang, Z. Lin, W. Lin, J. Zhang, K. Ding, Y. Wang, Q. Zheng, Z. Zhan, F. Yan, D. Chen, P. Lv, X. Wang. Chin. Sci. Bull., 59 (12), 1235 (2014). DOI: 10.1007/s11434-014-0154-4
- I.D. Venevtsev, A.P. Tarasov, A.E. Muslimov, E.I. Gorokhova, L.A. Zadorozhnaya, P.A. Rodnyi, V.M. Kanevsky. Materials, 14 (8), 2001, (2021). DOI: 10.3390/ma14082001
- I.D. Venevtsev, P.A. Rodnyi, A.E. Muslimov, V.M. Kanevskii, V.A. Babaev, A.M. Ismailov. Opt. Spectrosc., 127, 1075 (2019). DOI: 10.1134/S0030400X19120282
- A.E. Muslimov, V.M. Kanevsky, I.D. Venevtsev, A.M. Ismailov. Cryst. Rep., 65, 766 (2020). DOI: 10.1134/S1063774520050144
- K. Tsunekawa. J. Vac. Soc. Japan., 53, 486 (2010). DOI: 10.3131/jvsj2.53.486
- M. Podlogar, J.J. Richardson, D. Vengust, N. Daneu, Z. Samardv zija, S. Bernik, A. Rev cnik. Adv. Funct. Mater., 22 (15), 3136 (2012). DOI: 10.1002/adfm.201200214
- M. Madel, G. Neusser, U. Simon, B. Mizaikoff, K. Thonke. J. Cryst. Growth, 419, 128 (2015). DOI: 10.1016/j.jcrysgro.2015.03.020
- A.E. Muslimov, A.M. Ismailov, Yu.V. Grigoriev, V.M. Kanevsky. J. Surface Investigation: X-ray, Synchrotron and Neutron Techniques., 15, 1195 (2021). DOI: 10.1134/S1027451021060148
- P.A. Rodnyi, S.B. Mikhrin, A.N. Mishin, A.V. Sidorenko. IEEE Trans. Nucl. Sci., 48 (6), 2340 (2001). DOI: 10.1109/23.983264
- L. Zhang, J. Wu, T. Han, F. Liu, M. Li, X. Zhu, Q. Zhaoa, T. Yu. Cryst. Eng. Commun., 23 (18), 3364 (2021). DOI: 10.1039/d1ce00040c
- E. Chubenko, V. Bondarenko, A. Ghobadi, G. Ulusoy, K. Topalli, A.K. Okyay. MRS Advances, 2 (14), 799 (2017). DOI: 10.1557/adv.2017.150
- J. Thornton. Annu. Rev. Mater. Sci., 7, 239 (1977). DOI: 10.1146/annurev.ms.07.080177.001323
- P.B. Barna, M. Adamik. Thin Solid Films., 317, 27 (1988). DOI: 10.1016/S0040-6090(97)00503-8
- A.M. Ismailov, L.L. Emiraslanova, M.K. Rabadanov, M.R. Rabadanov, I.Sh. Aliev. Tech. Phys. Lett., 44, 528 (2018). DOI: 10.1134/S1063785018060202
- A.P. Tarasov, I.D. Venevtsev, A.E. Muslimov, L.A. Zadorozhnaya, P.A. Rodnyi, V.M. Kanevsky. Quantum Electron., 51 (5), 366 (2021). DOI: 10.1070/QEL17534
- A.E. Muslimov, M.Kh. Rabadanov, A.M. Ismailov, Prikladnaya fizika, 3, 72 (2017) (in Russian)
- C.F. Klingshirn. Semiconductor Optics, 4th ed. (Springer, Berlin, 2012)
- C. Klingshirn, R. Hauschild, J. Fallert, H. Kalt. Phys. Rev. B, 75, 1 (2007). DOI: 10.1103/PhysRevB.75.115203
- M.A. Versteegh, T. Kuis, H.T.C. Stoof, J. I. Dijkhuis. Phys. Rev. B, 84, 035207 (2011). DOI: 10.1103/PhysRevB.84.035207
- U. Ozgur, Y.I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Dov gan, V. Avrutin, S.-J. Cho, A.H. Morko c. J. Appl. Phys., 98, 11 (2005). DOI: 10.1063/1.1992666
- S.A. Studenikin, M. Cocivera. J. Appl. Phys., 91 (8), 5060 (2002). DOI: 10.1063/1.1461890
- M.V. Ryzhkov, S.I. Rumyantsev, V.M. Markushev, Ch.M. Briskina, A.P. Tarasov. J. Appl. Spectrosc., 81, 877 (2014). DOI: 10.1007/s10812-014-0021-8
- S. Rumyantsev, A. Tarasov, C. Briskina, M. Ryzhkov, V. Markushev, A. Lotin. J. Nanophotonics, 10, 016001 (2016). DOI: 10.1117/1.JNP.10.016001
- M. Nakayama, Y. Nakayama. J. Phys. Soc. Japan., 88 (8), 083706 (2019). DOI: 10.7566/JPSJ.88.083706
- A.P. Tarasov, L.A. Zadorozhnaya, A.E. Muslimov, Ch.M. Briskina, V.M. Kanevsky. JETP Lett., 114, 517 (2021). DOI: 10.1134/S0021364021210116.
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